Phonon transport in silicon, influence of the dispersion properties choice on the description of the anharmonic resistive mechanisms

Lacroix, David; Traore, I.; Fumeron, Sébastien; Jeandel, G.

doi:10.1140/epjb/e2008-00464-6

Cited by 14 publications

(12 citation statements)

References 29 publications

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“…34 Such a mechanism has been theoretically predicted in zigzag single-walled carbon nanotubes. 35 Since a single phonon can split into two phonons, the longitudinal acoustic phonons in a stressed nanowire should also behave similarly.…”

Section: Resultsmentioning

confidence: 88%

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Lattice thermal conductivity of a silicon nanowire under surface stress

Liangruksa

Puri

2011

Journal of Applied Physics

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Lattice thermal conductivity in a silicon nanowire with square cross section J. Appl. Phys. 100, 014305 (2006) The effects of surface stress on the lattice thermal conductivity are investigated for a silicon nanowire. A phonon dispersion relation is derived based on a continuum approach for a nanowire under surface stress. The phonon Boltzmann equation and the relaxation time are employed to calculate the lattice thermal conductivity. Surface stress, which has a significant influence on the phonon dispersion and thus the Debye temperature, decreases the lattice thermal conductivity. The conductivity varies with changing surface stress, e.g., due to adsorption layers and material coatings. This suggests a phonon engineering approach to tune the conductivity of nanomaterials.

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Section: Resultsmentioning

confidence: 88%

“…The resistance to thermal transport can be created through three such Umklapp processes. 34 These are described based on the phonon polarization, i.…”

Section: Resultsmentioning

confidence: 99%

Lattice thermal conductivity of a silicon nanowire under surface stress

Liangruksa

Puri

2011

Journal of Applied Physics

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“…This means that dispersion properties of materials shall be taken into account. Here, we used data extensively detailed in previous works for silicon [53][54][55] and germanium. 53,56 These parameters are given in the Appendix.…”

Section: A Monte Carlo Modelling Of the Btementioning

confidence: 99%

Monte Carlo simulations of phonon transport in nanoporous silicon and germanium

Jean¹,

Fumeron²,

Termentzidis³

et al. 2014

Journal of Applied Physics

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International audienceHeat conduction of nanoporous silicon and germanium thin films is studied thanks to a statistical approach. Resolution of phonon Boltzmann transport equation is performed with a Monte Carlo technique in order to assess thermal conductivity. Sensitivity of this latter property with respect to parameters such as phonon mean free path and characteristics of the pores ( distribution, size, porosity) is discussed and compared to predictions from analytical models. Results point out that thermal properties might be tailored through the design of the porosity and more specifically by the adjustment of the phonon-pore mean free path. Finally, an effective medium technique is used to extend our work to multilayered crystalline-nanoporous structures. Results show that ought to pore scattering, a diffusive Fourier regime can be recovered even when the film thickness is below the bulk limit

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“…At such scales, thermal conductivity and temperature gradient are reduced while discontinuity in the temperature distribution near the boundary exists [13][14][15][16][17][18][19][20]. Therefore, either the general Boltzmann transport equation (BTE) or the phonon radiative transport equation (PRTE) is required to correctly model the phonon transport [1,2,[21][22][23][24][25][26]. The energy equations for electrons and phonons in the TTM and the EPDHEs where the diffusion approximation is assumed are to be substituted by the corresponding BTE in the intensity form in order to account for the ballistic behaviors of heat carriers.…”

Section: Introductionmentioning

confidence: 99%

“…Among analytical and numerical methods available to solve the BTE [1,2,4,23,26,28], Monte Carlo (MC) simulations are proven to be the most flexible and accurate, yet they can be slow and expensive in terms of computational resources depending on the levels of physics included in the simulation. Many researchers have used MC simulations for phonon transport at nanoscales because of its flexibility in accounting complicated geometries and the correct phonon dispersion relation and different polarization branches [14,[16][17][18][19][20]25,[29][30][31]. While the simulation has been successfully used for predicting thermal conductivities of nanostructures such as nanowires and nanofilms [14,[18][19][20][31][32][33][34], there is plenty of room for improvement in the algorithm, especially for treating the phonon-phonon scattering mechanisms.…”

Section: Introductionmentioning

confidence: 99%