Phonons as probes in self-organized SiGe islands

Groenen, Jesse; Carles, R.; Christiansen, Silke; Albrecht, M.; Dorsch, W.; Strunk, H. P.; Wawra, H.; Wagner, Günther A.

doi:10.1063/1.120525

Cited by 107 publications

(53 citation statements)

References 12 publications

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“…Such samples have been characterized by a variety of methods like scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy [1], electron energy loss spectroscopy [2], micro-Raman investigation [3], grazing incidence X-ray diffraction [4], and high-resolution X-ray diffraction (HRXRD) [5].…”

Section: Introductionmentioning

confidence: 99%

Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

Teubner¹,

Jendritzki

Böttcher

et al. 2008

Cryst. Res. Technol.

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In situ X-ray examination at a synchrotron beamline of the solution growth of self-assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assembly up to 600 °C. The temperature field and the gas flow in the furnace have been numerically modeled. In this way a meaningful estimate about the power consumption and the thermal gradient across the sample has been reached. Despite its low heat capacity and, thus, fast heating and cooling ability the furnace can be stabilized to ± 0.1 K by a highperformance temperature controller. The growth assembly has been prepared within three separate stages carried out in conventional slideboat liquid phase epitaxy equipment. Such growth assembly allows carrying out then intended experiments without H 2 as normally used in liquid phase epitaxy in favor of N 2 , meeting the demand of minimized risks at beamlines. The equipment ensures an easy handling of the growth assembly.

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Section: Introductionmentioning

confidence: 99%

Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

Teubner¹,

Jendritzki

Böttcher

et al. 2008

Cryst. Res. Technol.

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“…The immovable peaks near 322 cm À1 marked as X is induced by the instrument itself. The continuous peak shift of Si-Si, Si-Ge and GeGe phonon peaks in SiGe layer indicates the change of the Ge content and the relaxation of the strain, which are sensitive functions of the Ge content x and strain e of the SiGe layer and can be expressed as follows [16][17][18]:…”

Section: Resultsmentioning

confidence: 99%

Strain relaxation in SiGe layer during wet oxidation process

Zhang

Cai

et al. 2009

Applied Surface Science

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“…The samples were growth by ultrahigh vacuum CVD and were highly homogeneous. Groenen et al [22] used the Raman frequencies method in strained SiGe islands grown by liquid phase epitaxy. The method applicability for SiGe nanoislands is supported by the considerably large Raman spot than SiGe island size.…”

Section: Resultsmentioning

confidence: 99%

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Anjos

Dói

Diniz

2009

e-J. Surf. Sci. Nanotechnol.

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This work presents the micro-Raman (µR) analysis in SiGe nanoclusters formed by rapid thermal annealing (RTA). Heterostructure of a-Si:H/Ge/a-Si:H was grown on p-Si (001) substrate by Electron Cyclotron Resonance ECR plasma deposition and e-beam technique. Different parts of the sample were heated at 1000• C during 40, 50, 60 and 70 seconds. The samples as-deposited and RTA processed were characterized by Raman measurements in order to evaluate the Ge concentration and strain for different annealing times. The same parameters were extracted from high-resolution x-ray diffraction (HRXRD) performed in grazing incidence x-ray reflection mode (GIXRR). The µR spectra were sensitive to film strain changes due to the Ge diffusion during RTA process. The association of both characterization techniques provides information about some features of the SiGe nanoclusters at different annealing times. The results show the potential micro-Raman applicability for SiGe nanoclusters embedded in amorphous structure characterization.

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Phonons as probes in self-organized SiGe islands

Cited by 107 publications

References 12 publications

Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

Strain relaxation in SiGe layer during wet oxidation process

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

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