2021
DOI: 10.1002/adts.202000250
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Phosgene Gas Sensing of Ti2CT2 (T = F, O, OH) MXenes

Abstract: The phosgene gas sensing properties of experimentally produced 2D titanium carbide MXenes with surface terminations (Ti2CT2: T = F−, O−, OH−) are studied by first‐principles calculations. The effect of Ti and C vacancy defects, which are frequently created in synthesizing MXenes, on the structural, mechanical, electronic, and gas adsorption properties are studied to analyze the phosgene gas sensing performance of Ti2CT2 MXenes. Pristine and defective Ti2C, Ti2CF2, and Ti2C(OH)2 show metallicity, making them id… Show more

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Cited by 34 publications
(20 citation statements)
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“…According to the investigations by S. Thomas and M. A. Zaeem, a short recovery time of an adsorbent is favorable for fabricating an efficient sensing device. 65,66 By considering this issue, we have taken the initiative to evaluate the recovery time by the following equation: 67 here, T is the temperature in Kelvin, κ B is Boltzmann's constant (2.0 × 10 −3 kcal mol −1 K −1 ), and ν the attempt frequency. Practically, an adsorbate molecule can be recovered from the adsorbent by exposing it to ultraviolet (UV) rays.…”
Section: Resultsmentioning
confidence: 99%
“…According to the investigations by S. Thomas and M. A. Zaeem, a short recovery time of an adsorbent is favorable for fabricating an efficient sensing device. 65,66 By considering this issue, we have taken the initiative to evaluate the recovery time by the following equation: 67 here, T is the temperature in Kelvin, κ B is Boltzmann's constant (2.0 × 10 −3 kcal mol −1 K −1 ), and ν the attempt frequency. Practically, an adsorbate molecule can be recovered from the adsorbent by exposing it to ultraviolet (UV) rays.…”
Section: Resultsmentioning
confidence: 99%
“…The x, y and z correspond to the total number of Si, B and N atoms in the supercell, and N denotes the total number of atoms in the Si 2 BN-ML supercell. Further, we have followed the method described in several other studies 21,38,51 to compute the vacancy formation energy (E VFE ) of Si 2 BN-ML structures with Si, B and N defects. The E VFE is computed using the following relation:…”
Section: Computational Detailsmentioning
confidence: 99%
“…The changes in the electrical conductivity are related to the charge transfer between the gas molecules and the Si 2 BN-ML. Besides, an efficient gas sensing performance depends on the quantifiable variations in the electrical conductivity 38,[61][62][63] of Si 2 BN-ML after the adsorption of COCl 2 and CO 2 molecules. In general, the adsorption of COCl 2 and CO 2 molecules on the Si 2 BN-ML can either increase or decrease the conductivity, depending on the rate of charge transfer between the Si 2 BN-ML and these target molecules.…”
Section: Mechanical and Electronic Propertiesmentioning
confidence: 99%
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