Phosphorene/ZnO Nano‐Heterojunctions for Broadband Photonic Nonvolatile Memory Applications

Abstract

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques.

Surface Reorganization on Electrochemically‐Induced Zn–Ni–Co Spinel Oxides for Enhanced Oxygen Electrocatalysis

“…Accordingly,the Zn species was found to be mostly in the + 2 oxidation state. [15] Co 2p XPS spectrum of Zn 0.4 Ni 0.6 Co 2 O 4 / NCNTs was fitted with one spin-orbit peak, indicating the existence of Co 3+ at about 796.2 and 780.7 eV (Supporting Information, Figure S3c). [16] TheN1s XPS spectrum of Zn 0.4 Ni 0.6 Co 2 O 4 /NCNTs shows the presence of metalÀN bonds and Pyrrole-N (Supporting Information, Figure S3e).…”

Surface Reorganization on Electrochemically‐Induced Zn–Ni–Co Spinel Oxides for Enhanced Oxygen Electrocatalysis

“…The Zn 2p spectrum of Zn 0.4 Ni 0.6 Co 2 O 4 /NCNTs was also fitted with spin‐orbit peaks, which were assigned to characteristic peaks of Zn 2+ at about 1021.2 and 1044.2 eV (Supporting Information, Figure S3b). Accordingly, the Zn species was found to be mostly in the +2 oxidation state . Co 2p XPS spectrum of Zn 0.4 Ni 0.6 Co 2 O 4 /NCNTs was fitted with one spin‐orbit peak, indicating the existence of Co 3+ at about 796.2 and 780.7 eV (Supporting Information, Figure S3c) .…”

Recent Advances in Memory Devices with Hybrid Materials

“…The retention property of 1T@2H-MoS 2 -based memory device remained the constant ON/OFF ratio until 600 s ( Figure 4d). [117] Under different wavelength with fixed irradiance, the set voltage of the ZB NPbased photonic ReRAM decreased to 4.08, 3.36, 3.26, and 2.95 V after illumination for 785, 633, 532, and 380 nm, respectively. Moreover, MoS 2related other hybrid materials-based memory devices have been reported with memory effect such as WORM or rewritable memory.…”