Phosphorus and hydrogen atoms on the (001) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond

Reusch, T. C. G.; Curson, Neil J.; Schofield, Steven R.; Hallam, Toby; Simmons, M. Y.

doi:10.1016/j.susc.2005.10.031

Cited by 19 publications

(19 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reusch et al 12 studied heterodimer diffusion from large square patches (400 × 400 nm) square patches at 800 K, while Hallam et al 13 performed similar work using lines of phosphorus (12.5 nm wide) at the slightly lower temperature of 740 K. In both cases, significant diffusion was observed (23 nm after 10 seconds at 800 K, and 7.5 nm after 15 seconds at 740 K). On the basis of Table II alone, our calculations would predict considerably less diffusion than is observed experimentally.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Diffusion pathways of phosphorus atoms on silicon (001)

et al. 2009

View full text Add to dashboard Cite

Using density functional theory and a combination of growing string and dimer method transition state searches, we investigate the interaction of phosphorus atoms with the silicon (001) surface.We report reaction pathways for three technologically important processes: diffusion of phosphorus adatoms on the surface, incorporation of the phosphorus adatom into the surface, and diffusion of the incorporated phosphorus atom within the surface. These reactions have direct relevance to nanoscale lithographic schemes capable of positioning single phosphorus atoms on the silicon surface. Temperatures of activation for the various processes are calculated and, where possible, compared with experiment.

show abstract

Section: Discussionmentioning

confidence: 99%

“…2,10,11 For an atomically accurate procedure for placing phosphorus atoms, it is crucial that full control over phosphorus incorporation and suppression of any unwanted phosphorus diffusion are achieved. 12,13 This necessitates a detailed understanding of the underlying chemical processes.…”

Section: Introductionmentioning

confidence: 99%

Diffusion pathways of phosphorus atoms on silicon (001)

et al. 2009

View full text Add to dashboard Cite

show abstract

“…Surface segregation and island formation are additional factors of undesirable effects in device fabrication. For that reason, there are numerous works associated with P-Si system [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, Curson et al using STM and AES have reported that the Si-P heterodimer showing Zigzag feature appeared on the annealing PH 3 dosed Si(0 0 1) surface [10]. Recent reports on the examination of P on the Si(0 0 1) surface of silicon with STM experiments by Reusch et heterodimer is formed by substitution of Si by P in Si-Si dimer [9].…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrogenation on P/Si(001)-(1×2)

2007

View full text Add to dashboard Cite

“…The phosphorus-doped Si surface that is the backbone of the microelectronic technology has been studied with a variety of surface-sensitive techniques: low-energy electron diffraction (LEED) [1,2], Fourier transform infrared spectroscopy (FTIR) [7,8], temperature-programmed desorption (TPD) [3,4], X-ray photoelectron spectroscopy (XPS) [5,6] high-resolution electron-energy-loss spectroscopy [9], and scanning tunneling microscopy (STM) [10][11][12][13][14][15]. The theoretical studies on this subject have been also carried out by several groups [16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%