Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C

Abstract

Doped polycrystalline SiC films were deposited from a SiH4-CH4-H2-(PH3 or N2) mixture by plasma-enhanced chemical vapor deposition at 700 °C. The best crystallinity was obtained at x∼0.53 in Si1−xCx for both undoped and doped films. The crystallinity was enhanced by both P and N doping, but deteriorated again under high doping conditions. Also, better crystallinity was obtained by doping with P rather than N. Intrinsic tensile and compressive stresses were observed for P- and N-doped films, respectively. The resistivity and dangling-bond density decreased in correspondence to the enhancement in crystallinity. Origins of the dangling bonds and of a change in the crystallinity were discussed.

Phosphorus-related donors in 6H-SiC generated by ion implantation

“…A similar pileup at the sample surface is also observed for Al and B implants in SiC for corresponding annealing steps. [14][15][16][17][18][19] It is reported that this reordering of Al/B atoms is caused by the high concentration of Si and C vacancies close to the surface generated by the implantation. A strong vacancy gradient to the surface is formed by the solid phase recrystallization of the implantation damage that starts at the interface of implanted layer and undamaged bulk region.…”

SiC and Si Quantum Dots Co-Precipitated Si-Rich SiC Film with n- and p-Type Dopants Grown by Hydrogen-Free PECVD

“…In Fig 7, the effective carrier concentration of the n-type Si x C 1-x :P grown with g = 50% is increased from 2.74 × 10 14 to 5.04 × 10 16 cm −3 by tuning the flow rate of dopant PH 3 gas from 4% to 7.3%, whereas the corresponding resistivity is significantly reduced from 5.7 × 10 1 to 3.1 × 10 −1 -cm, respectively. 42 Except these distinguished results, most of the previous works utilized the SiC synthesized by plasma-enhanced or the hot-wire CVD can only provide the p-type [43][44][45] and n-type SiC 46,15 with their resistivities ranging between 10-50 -cm. By comparison, we preliminarily propose the unique LT-PECVD synthesis as compared to previous approach 47 for obtaining both the p-type and n-type Si-rich SiC films with co-precipitated Si-QDs and SiC-QDs, and their lowest resistivity can be reduced to 20 -cm and 0.3 -cm, respectively.…”

“…15 Later on, the n-type microcrystalline cubic (μc-3C) SiC:H film was obtained with its conductivity (σ) of only 3.2 × 10 −2 S/cm by employing the PH 3 as a doping recipe in the hot-wire chemical vapor deposition (HWCVD) at low substrate temperature (300 • C). 16 More recently, Hasegawa et al preliminarily reported the n-type SiC film with a resistivity as low as 2 × 10 −1 -cm by using PECVD with the recipe of a gaseous mixture containing the SiH 4 , CH 4 and PH 3 at 700 o C. 17 Nevertheless, most of the reported conductivities for versatile SiC films synthesized by PECVD are still low, and few researches on the insitu PECVD grown non-stoichiometric SiC films with low-resistivity n-and p-type dopants have been addressed up to now. Therefore, the preparation of the low resistivity Si x C 1-x film with buried Si-QDs has been considered as a mandatory issue for improving the carrier transportation of the Si-QD based LEDs, or increasing the solar energy conversion efficiency of the SiC based photovoltaic solar cells.…”

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

“…The dopant incorporation into the SiC lattice is known to affect the crystallinity, morphology and mechanical properties of the films [ 13 , 14 ]. Crystallinity is very important when applying doped 3C-SiC in electronic devices because the crystal defects directly influence their leakage current and breakdown voltage.…”