Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition

Abstract

Background-We conducted a prospective, multicenter, randomized comparison of implantable cardioverter-defibrillator (ICD) versus antiarrhythmic drug therapy in survivors of cardiac arrest secondary to documented ventricular arrhythmias. Methods and Results-From 1987, eligible patients were randomized to an ICD, amiodarone, propafenone, or metoprolol (ICD versus antiarrhythmic agents randomization ratio 1:3). Assignment to propafenone was discontinued in March 1992, after an interim analysis conducted in 58 patients showed a 61% higher all-cause mortality rate than in 61 ICD patients during a follow-up of 11.3 months. The study continued to recruit 288 patients in the remaining 3 study groups; of these, 99 were assigned to ICDs, 92 to amiodarone, and 97 to metoprolol. The primary end point was all-cause mortality. The study was terminated in March 1998, when all patients had concluded a minimum 2-year follow-up. Over a mean follow-up of 57Ϯ34 months, the crude death rates were 36.4% (95% CI 26.9% to 46.6%) in the ICD and 44.4% (95% CI 37.2% to 51.8%) in the amiodarone/metoprolol arm. Overall survival was higher, though not significantly, in patients assigned to ICD than in those assigned to drug therapy (1-sided Pϭ0.081, hazard ratio 0.766, [97.5% CI upper bound 1.112]). In ICD patients, the percent reductions in all-cause mortality were 41.9%, 39.3%, 28.4%, 27.7%, 22.8%, 11.4%, 9.1%, 10.6%, and 24.7% at years 1 to 9 of follow-up. Conclusions-During long-term follow-up of cardiac arrest survivors, therapy with an ICD is associated with a 23%(nonsignificant) reduction of all-cause mortality rates when compared with treatment with amiodarone/metoprolol. The benefit of ICD therapy is more evident during the first 5 years after the index event. (Circulation. 2000;102:748-754.)

In-situ phosphorous-doped SiGe layer on Si substrate by reactive thermal chemical vapor deposition at low temperature

“…However, a decrease in the growth rate is observed when the doping ratio is higher than 750 ppm and the smallest growth rate of 26.5 nm/min is obtained when the doping ratio is 7500 ppm. Similar results have been obtained during insitu doping of Ge or Si with P [5,11], where it has been demonstrated that P atoms impedes Ge or Si adsorption by blocking the free active sites on the growth surface and thus leading to the decrease of growth rate. A similar mechanism may also account for the present result on insitu doping of SiGe films.…”

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

“…This saturation at a rather low value is most probably due to the well-documented tendency of phosphorus atoms of segregating onto the growing surface (see Ref. [38] and references therein), and also to a parasitic gas phase reaction (2PH 3 2P 2 +3H 2 ) at high PH 3 partial pressures that partially inhibits mono-atomic P incorporation into silicon [39].…”

Arsenic atomic layer doping in Si using AsH3

“…[3], strong segregation of P and As in the Si cap layer is shown. In order to control the autodoping, which is unintentional doping due to outgas from reactor wall and/or susceptor, a surface treatment by oxidation and etching or chemical mechanical polishing after P doping and before deposition of an non-doped cap layer are reported [6,7]. It is also reported that lowering the growth temperature of the cap helps to reduce the P segregation [8].…”