Photo-assisted electrodeposition of a ZnO front contact on a p/n junction

Tsin, Fabien; Hariskos, Dimitrios; Lincot, Daniel; Rousset, Jean

doi:10.1016/j.electacta.2016.10.102

Cited by 8 publications

(3 citation statements)

References 14 publications

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“…For gallium this feature occurs at potentials lower than −1.5 V. In this potential range the metal composition of the layers becomes nearly constant, however the morphology becomes highly dendritic. 13 Influence of dioxygen.-Since dioxygen could be considered as possible oxygen precursor for the deposition of Cu-In-Ga oxides, 20,25 its influence on the deposition process was investigated. The solutions were saturated by bubbling dioxygen for 20 minutes prior to the experiment and an oxygen flux was kept over the solution during the experiment.…”

Section: Voltammetric Microgravimetric and Chemical Analysis Studiesmentioning

confidence: 99%

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Mechanistic Study of One-Step Cathodic Electrodeposition of Mixed Cu-In-Ga Oxide/Hydroxide Films with Hydrogen Peroxide Oxygen Precursor

Chassaing¹,

Duchatelet²,

Lincot³

2017

J. Electrochem. Soc.

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Electrodeposition of multicomponent oxide films with semiconducting properties for use in various applications like photovoltaics is of great interest. This paper deals with mixed copper, indium, gallium oxides which can be used as precursors for copper indium gallium diselenide layer in thin film solar cells and potentially p-type transparent oxide layers, in the delafossite family. One-step cathodic electrodeposition of Cu-In-Ga mixed oxide/hydroxide is investigated using hydrogen peroxide as the oxygen source. The deposition mechanism of the Cu-In-Ga oxide layers is studied by cyclic voltammetry and in situ using an electrochemical quartz crystal microbalance. A marked influence of hydrogen peroxide on the Cu(II), In(III) and Ga(III) electrochemical system is evidenced. Hydrogen peroxide enables the incorporation of indium and gallium as oxides/hydroxides at much less negative potentials than the In and Ga metals. A reaction path is proposed which accounts for the main experimental results. The reduction process starts with the reduction of cupric species, which is followed by the reduction of hydrogen peroxide. For peroxide concentrations higher than 20 mM, the precipitation of Ga and In oxides/hydroxides takes place. At more negative potentials the reactions become controlled by mass transfer allowing to control the composition of the films.

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Section: Voltammetric Microgravimetric and Chemical Analysis Studiesmentioning

confidence: 99%

“…z E-mail: elisabeth.chassaing@chimie-paristech.fr ular for the synthesis of zinc oxide layers [23][24][25] or more recently for tin oxide deposition. 26 The process has been successfully introduced for the deposition of Cu-In-Ga oxide layers.…”

mentioning

confidence: 99%

Mechanistic Study of One-Step Cathodic Electrodeposition of Mixed Cu-In-Ga Oxide/Hydroxide Films with Hydrogen Peroxide Oxygen Precursor

Chassaing¹,

Duchatelet²,

Lincot³

2017

J. Electrochem. Soc.

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“…In particular, ED has met with success in preparing a wide range of photoelectrochemical and photovoltaic solar absorber films, including Sb 2 Se 3 ( Ngo et al., 2014 ), CdTe ( Lincot, 2005 ), Cu 2 O ( Dias et al., 2015 ), CuSbS 2 ( Rastogi and Janardhana, 2014 , Septina et al., 2014 ), Cu(In, Ga)Se 2 (CIGS) ( Duchatelet et al., 2013 , Lincot et al., 2004 ), Cu 2 ZnSnS(e) 4 [CZTS(e)] ( Colombara et al., 2015 , Peter, 2015 ), and CH 3 NH 3 PbI 3 ( Chen et al., 2015 , Huang et al., 2015 ). Aside from the absorbers, functional ZnO window layers ( Tsin et al., 2015 , Tsin et al., 2016a ), Zn-based finger grids ( Tsin et al., 2016b ), and CuSCN ( Ye et al., 2015 ) charge transport layers in the thin-film solar cells can be as well prepared by ED. Besides, ED has already demonstrated great success in the roll-to-roll CIGS solar panel manufacture, which is based on the precursor type of an electrodeposited Cu-In-Ga alloy covered by an electrodeposited In-Se or Ga-Se single layer ( Aksu et al., 2012 , Başol et al., 2009 ).…”

Section: Introductionmentioning

confidence: 99%

Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4

Yan

2018

iScience

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SummaryElectrodeposition (ED) technology is a low-cost industrial candidate for solar cell fabrication. However, the practical aspects of controlling deposit morphology and composition have not been significantly addressed because of the complex co-plating variables that still need to be understood for multinary alloy ED. This work addresses these practical aspects on how to control composition and deposit morphology using co-electrodeposited kesterite alloy precursors as a case study. The alloy precursors co-plated under the optimized conditions from a mixed thiosulfate-sulfite electrolyte bath show uniform, smooth, and compact film morphology as well as uniform distribution of composition, well suited for efficient kesterite absorbers, finally delivering a Cu2ZnSnS4 (CZTS) thin-film solar cell with 7.4% efficiency based on a configuration Mo/CZTS/CdS/ZnO/aluminum-doped ZnO. This work underscores that alloy ED, with the advantage of controllable composition and morphology, holds promise for low-cost industrial manufacture of thin-film solar cells.

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Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications

et al. 2017

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Photo-assisted electrodeposition of a ZnO front contact on a p/n junction

Cited by 8 publications

References 14 publications

Mechanistic Study of One-Step Cathodic Electrodeposition of Mixed Cu-In-Ga Oxide/Hydroxide Films with Hydrogen Peroxide Oxygen Precursor

Mechanistic Study of One-Step Cathodic Electrodeposition of Mixed Cu-In-Ga Oxide/Hydroxide Films with Hydrogen Peroxide Oxygen Precursor

Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4

Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications

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