Photo-Cross-Linkable Organic–Inorganic Hybrid Gate Dielectric for High Performance Organic Thin Film Transistors

Kim, Kyunghun; Song, Hyun Woo; Shin, Kwonwoo; Kim, Se Hyun; Park, Jin Young

doi:10.1021/acs.jpcc.6b00213

Cited by 35 publications

(35 citation statements)

References 36 publications

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“…Specifically, we have extracted a subthreshold swing of around 79 mV per decade and high on/off current ratio of about 10 5 . These values are among the best reported for low‐voltage organic transistors as can be observed from Figure , which compares the subthreshold swing for a range of reported low‐voltage devices prepared by various technologies …”

Section: Resultssupporting

confidence: 54%

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Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Haase

Zessin

Zoumboulis

et al. 2019

Adv Elect Materials

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With the prospect of realizing innovative technologies by large‐area fabrication at low cost and high throughput, printing and coating technologies are being intensively researched for the deposition of functional films. One promising coating technology is solution shearing, which has been studied as a deposition technique for organic semiconductors but not to a greater extent for dielectric layers. Therefore, the deposition by solution shearing of high‐quality poly(4‐vinylphenol) dielectrics is investigated, and the utility of these films as ultra‐smooth dielectric substrates for transistors is demonstrated. By comparing these films to those prepared by spin‐coating, it is possible to highlight the advantages of the technique. Specifically, thinner films with thicknesses as low as 11.4 nm but still low leakage and almost identical surface properties can be achieved. Thus, dielectric films with a very high capacitance of 280 nF cm‐2 are realized in a single coating step. Probing these films within organic transistors shows that they can facilitate operation at voltages as low as ‐1 V. Finally, it is shown how the use of a polymer‐small‐molecule–semiconductor blend can pave the way toward high‐performance, ultra‐low‐voltage devices from solution.

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Section: Resultssupporting

confidence: 54%

“…Subthreshold swing of reported low‐voltage devices with dielectric films prepared by various technologies …”

Section: Resultsmentioning

confidence: 99%

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Haase

Zessin

Zoumboulis

et al. 2019

Adv Elect Materials

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“…2 For a better interface, the hybrid gate dielectrics must have good compatibility with either organic or inorganic semiconductors. 11 The organic materials for dielectric gate applications offer a smooth surface and good compatibility to grow organic semiconductors, but they have low dielectric constant and therefore low capacitance. 12 On the other hand, the high processing temperature of inorganic dielectric materials with high k values is not compatible with deposition on flexible plastic substrates required in flexible electronics.…”

Section: Introductionmentioning

confidence: 99%

Sol–Gel PMMA–ZrO₂Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

et al. 2017

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We report a simple sol–gel process for the deposition of poly(methyl methacrylate) (PMMA)–ZrO 2 organic–inorganic hybrid films at low temperature and studied their properties as a function of the molar ratios of the precursors in the hybrid sol–gel solution, which included zirconium propoxide as the inorganic (zirconia) source, methyl methacrylate as the organic source, and 3-trimethoxy-silyl-propyl-methacrylate (TMSPM) as the coupling agent to enhance the compatibility between the organic and inorganic phases. The hybrid thin-film deposition was done on glass slide substrates by the dip-coating method. After deposition, the films were heat-treated at 100 °C for 24 h. The analysis of the hybrid films included Fourier transform infrared spectroscopy to identify their chemical groups and thermogravimetric analysis to determine the content of their organic and inorganic components. In addition, capacitance–voltage ( C – V ) and current–voltage ( I – V ) curves in metal–insulator–metal structures, using gold as metal contacts, were measured to find the dielectric constant and leakage current of the PMMA–ZrO 2 hybrid films. Finally, because of their adequate dielectric characteristics, single hybrid layers were deposited on indium tin oxide-coated glass substrates and were tested as gate dielectric in thin-film transistors (TFTs), using sputtered ZnO layers as the semiconductor active channel. We measured the output electrical response and transfer characteristics of these hybrid dielectric gate-based devices and determined their main electrical parameters as a function of the TMSPM content in the hybrid dielectric gate layer. The better TFT electrical behavior presents field effect mobility of 0.48 cm 2 /V s, low threshold voltage of 3.3 V, and on/off current ratio of 10 5 , and it was obtained by using PMMA–ZrO 2 with 0.3 TMSPM content as the gate dielectric layer. The values obtained for the electrical parameters show that PMMA–ZrO 2 hybrid films are quite suitable for dielectric gate applications in TFTs

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“…[19][20][21][22][23] Various polymer/ nanoparticle hybrid gate dielectrics also have been investigated. [24][25][26][27][28][29][30][31][32] Although the performance of organic thin-lm transistors (OTFTs) using some of the polymer dielectrics is comparable to those using SiO 2 dielectrics in terms of charge mobility, 7,14,15,33 many problems including large hysteresis of threshold voltage, high leakage current, and high operating voltage are not fully addressed yet. 11,34,35 In this study, we report a solution processable gate insulating material based on dually crosslinkable core-shell nanoparticles (SiO 2 @PSR XL ).…”

Section: Introductionmentioning

confidence: 99%

“…In this sense, our work is different from other examples based on the polymer/nanoparticles composites. [24][25][26][27][28][29][30][31][32]…”

Section: Introductionmentioning

confidence: 99%

Dually crosslinkable SiO₂@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

et al. 2017

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Photo-Cross-Linkable Organic–Inorganic Hybrid Gate Dielectric for High Performance Organic Thin Film Transistors

Cited by 35 publications

References 36 publications

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Sol–Gel PMMA–ZrO₂Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

Dually crosslinkable SiO₂@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

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Photo-Cross-Linkable Organic–Inorganic Hybrid Gate Dielectric for High Performance Organic Thin Film Transistors

Cited by 35 publications

References 36 publications

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Sol–Gel PMMA–ZrO2Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

Dually crosslinkable SiO2@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

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Product

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Sol–Gel PMMA–ZrO₂Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

Dually crosslinkable SiO₂@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators