2000
DOI: 10.1016/s0169-4332(00)00768-6
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Photo-deposition of tantalum pentoxide film using 222 nm excimer lamps

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Cited by 7 publications
(3 citation statements)
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“…[9][10][11][12] Photoinduced chemical vapor deposition has received much attention since it operates at low temperature, which minimizes problems such as atomic diffusion, dopant redistribution, and defect generation caused by higher temperature and also the processed surface is not subject to the damaging ionic bombardment, which is inevitable in plasma assisted methods. 13,14) Ion beam sputtering deposition (IBSD) is an atom-by-atom (or molecule-by-molecule) transport process of high energy materials in a relatively cold and high vacuum environment, resulting in a film with a high packing density and low optical scattering. 15,16) Ta 2 O 5 can be also grown electrochemically by anodic polarizedation in various aqueous solutions.…”
Section: Introductionmentioning
confidence: 99%
“…[9][10][11][12] Photoinduced chemical vapor deposition has received much attention since it operates at low temperature, which minimizes problems such as atomic diffusion, dopant redistribution, and defect generation caused by higher temperature and also the processed surface is not subject to the damaging ionic bombardment, which is inevitable in plasma assisted methods. 13,14) Ion beam sputtering deposition (IBSD) is an atom-by-atom (or molecule-by-molecule) transport process of high energy materials in a relatively cold and high vacuum environment, resulting in a film with a high packing density and low optical scattering. 15,16) Ta 2 O 5 can be also grown electrochemically by anodic polarizedation in various aqueous solutions.…”
Section: Introductionmentioning
confidence: 99%
“…13 However, the refractive index of 2.0-2.1 and the optical bandgap of 4.15 eV were reported by the study of photo-CVD. 8,9 The high frequency ͑100 kHz͒ C-V characteristics of Ta 2 O 5 MIM capacitors were measured. The dielectric constant is about 22-25.…”
Section: Resultsmentioning
confidence: 99%
“…Tantalum oxide thin films have been studied extensively in a number of applications, such as thin film transistors, 1 electroluminescent devices, 2 antireflection coating for solar cells, 3 and a promising alternative dielectric material 4,5 to replace the thin SiO 2 layer in a storage capacitor in scaled-down dynamic random access memories ͑DRAMS͒ because of their high dielectric constant values compared with SiO 2 . The films were prepared by many deposition methods such as chemical vapor deposition ͑CVD͒ 5,6 photo-induced CVD ͑photo-CVD͒ [7][8][9] and atomic layer deposition ͑ALD͒. By using the ALD techniques, self-limiting growth of tantalum oxide films was achieved and they were very good uniform in thickness, grain size, and crystalline structure.…”
mentioning
confidence: 99%