Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium–Gallium–Zinc Oxide Films

Seo, Seung Gi; Jeong, Jinheon; Jin, Sung Hun

doi:10.1109/led.2021.3099066

Search citation statements

Order By: Relevance

Paper Sections

Select...

Discussion1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2024

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the future, largescale preparations of TFT and photodetector arrays based on a-IZTO thin films can be hopefully achieved. 53 Table 1 Comparisons of the figures of merit of a-IZTO and other materials-based photodetectors [40][41][42][43][44][45][46][47][48] Photodetectors…”

Section: Discussionmentioning

confidence: 99%

Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Yin

et al. 2022

Nanoscale

View full text Add to dashboard Cite

show abstract

Section: Discussionmentioning

confidence: 99%

Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Yin

et al. 2022

Nanoscale

View full text Add to dashboard Cite

show abstract

Modulation of oxygen vacancies in InSnZnO thin films and applications for high-speed metal-semiconductor-metal ultraviolet photodetectors

Chen,

Zhu,

Han

et al. 2024

Applied Surface Science

View full text Add to dashboard Cite

Toward low-power-consumption source-gated phototransistor

Wang,

Liu,

Zhang

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

The power consumption is challenging the next-generation electronic and optoelectronic devices. In this Letter, the n-type source-gated transistor (SGT) enabled by CdS nanobelt is investigated in detail, demonstrating the expected low power consumption, along with impressive photodetection performance. The SGT is realized by deliberately introducing the Schottky barrier at the source of the staggered-electrode transistor, exhibiting a small saturated voltage (VSAT) of 0.84 ± 0.21 V and a remarkably low power consumption of 7.56 ± 4.01 nW. Under illumination, the as-constructed SGT also shows a low power consumption of 7.58 nW, which is much lower than that of the most reported phototransistors operating in the saturated region. Moreover, the source-gated phototransistor also shows a high responsivity of 2.54 × 103 A W−1 and a high detectivity of 6.72 × 1012 Jones. All results imply that the as-constructed low-power-consumption source-gated phototransistor promises next-generation high-performance electronic and optoelectronic devices.

show abstract

Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium–Gallium–Zinc Oxide Films

Cited by 3 publications

References 24 publications

Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Modulation of oxygen vacancies in InSnZnO thin films and applications for high-speed metal-semiconductor-metal ultraviolet photodetectors

Toward low-power-consumption source-gated phototransistor

Contact Info

Product

Resources

About