Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

Abstract

Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa𝑥Sb1−𝑥 semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration.

Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

“…[1,2] The spin texture induced by spin-orbit interaction (SOI) in non-centrosymmetric materials has been regarded as a promising avenue for next-generation spintronics applications. [15][16][17][18][19] This offers great potential applications in a new generation of spintronic devices for low-power information processing. [20][21][22][23][24] In 2D HgTe/CdTe quantum wells (QWs) with an invertedband structure, the helical edge channels have been demonstrated experimentally in the Hall bar geometry.…”