Photo-Related Stress Effects in a-SiGe:H Thin Film Transistors for Infrared Image Sensors

Han, Sang Youn; Jeon, Kug Jin; Song, Jae–Hoon; Jeon, Ho Sik; Bae, Byung Seong

doi:10.1109/jdt.2012.2224092

Cited by 7 publications

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among them are hydrogenated a-Si (amorphous Si), a-Ge and their alloy a-Si x Ge 1-x that find applications in solar cells [16,17,[22][23][24][25][26][27][28]. As regards a-Ge and a-Si x Ge 1-x they are also very suitable for IR radiation sensors [29], like un-cooled microbolometers [30], thin films transistors [31], detectors for X-or γ-ray imaging [16] and fiber-optic systems [32]. For such applications hydrogenation is always applied since H reduces, by even an astounding 4 orders of magnitude [33], the density of the dangling bonds which are harmful for the electro-optical performance of the devices since they act as carrier trapping and recombination centres.…”

Section: Introductionmentioning

confidence: 99%

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Surface quality is a key issue in semiconductor structures for device applications. Typical surface defects are blisters. Here we investigate on the relationship between the activation energy of blistering and the composition x in hydrogenated amorphous a-Si x Ge 1-x by employing layers deposited by Radio Frequency sputtering. To this aim the blistering activation energy was determined by means of Arrhenius plots in several samples with different compositions, including x=0 and x=1. Each sample was submitted to heat treatment up to the temperature where the onset of blistering was observed by change of the surface reflectivity. It is found that a linear dependence of the activation energy on x similar to the Vegard's law holds. The experimental result is supported by reaction kinetics modeling. It is suggested that the key step for the formation of blisters is the scission of the SiH and GeH bonds. The related energetic reaction leading to the formation of H 2 molecules in a-Si x Ge 1-x follows a linear law as a function of the x composition similarly to the activation energy.

show abstract

Section: Introductionmentioning

confidence: 99%

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

View full text Add to dashboard Cite

show abstract

P‐16: Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin‐Film Transistor under Extremely High Intensity Illumination

liu¹,

Jiang²,

Xu³

et al. 2021

Symp Digest of Tech Papers

View full text Add to dashboard Cite

The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumination. 500‐hours RA results confirmed that our optimization strategy can effectively improve the reliability of TFT‐LCDs.

show abstract

32.4: Abnormal Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin Film Transistor under Extremely High Intensity Illumination

liu¹,

Jiang²,

Xu³

et al. 2021

Symp Digest of Tech Papers

View full text Add to dashboard Cite

The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) interface layer were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumination. 500‐hours RA results confirmed that our optimization strategy can effectively improve the reliability of TFT‐LCDs.

show abstract

Photo-Related Stress Effects in a-SiGe:H Thin Film Transistors for Infrared Image Sensors

Cited by 7 publications

References 28 publications

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

P‐16: Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin‐Film Transistor under Extremely High Intensity Illumination

32.4: Abnormal Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin Film Transistor under Extremely High Intensity Illumination

Contact Info

Product

Resources

About