Ge26.7Ga8S65.3 (GGS) and 0.1% Au‐doped Ge26.7Ga8S65.3 (GGS‐Au) glasses were prepared and annealed at a temperature that is 20 K higher than their respective glass transition temperature in order to create chalcogenide glass‐ceramics. X‐ray diffraction results showed that, thermal annealing can induce large amount of the crystal growth in the pure glass but this can be significantly suppressed by Au doping in the glass, which is in agreement with the previous results. We further employed various calorimetric methods, together with Mauro‐Yue‐Ellison‐Gupta‐Allan viscosity model, to investigate their crystallization kinetics. The crystal growth rate at annealing temperature of 723 K was quantitatively deduced to be 2.5 × 10−8 μm/s in Au‐doped GGS, which is about 20 times slower than that in the pure GGS with a growth rate of 4.7 × 10−7 μm/s.