Photo-switching effect in stilbene organic field effect transistors

Karimi–Alavijeh, Hamidreza; Panahi, Farhad; Gharavi, Alireza

doi:10.1063/1.4864019

Cited by 24 publications

(16 citation statements)

References 32 publications

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“…N trap,dark for L‐upe‐based device (2.8 × 10 12 ) is higher than for PMMA‐based device (1.6 × 10 12 ), suggesting that a more negative gate voltage is required for L‐upe device to generate enough electrons and holes to fill the traps and form the conductive channel (i.e., reach the threshold). More importantly, the presence of certain types of functional groups (EW and ED groups) in the active channel material is well known to affect the shift in V Th towards more negative values and lower the hole mobility for p‐type semiconductors . The L‐upe polymer chain is composed of both EW and ED groups while PMMA is composed only of pending EW groups and neutral aliphatic moieties.…”

Section: Resultsmentioning

confidence: 99%

“…More importantly, the presence of certain types of functional groups (EW and ED groups) in the active channel material is well known to affect the shift in V Th towards more negative values and lower the hole mobility for p-type semiconductors. [ 26 ] The L-upe polymer chain is composed of both EW and ED groups while PMMA is composed only of pending EW groups and neutral aliphatic moieties.…”

Section: Wileyonlinelibrarycommentioning

confidence: 99%

“…[ 26,27 ] In both cases, photoactive channel materials were completely or partially composed of the photochromic molecules, namely, oligomeric stilbenes containing EW/ED groups [ 26 ] and a polyester functionalized with pendant azobenzene moieties having EW/ ED groups. [ 27 ] The authors attributed the drain current modulation not only to the cis-trans isomerization of the photochromic moieties but also to the charge trapping of the photogenerated charge carriers by the EW/ED groups.…”

Section: Introductionmentioning

confidence: 99%

“…The presence of the charge trapping/releasing moieties (i.e., electron‐withdrawing (EW) and electron‐donating (ED) groups) in the active channel materials has been shown to result in a successful optical modulation of electrical properties of the OTFTs for memory and sensing applications . In both cases, photoactive channel materials were completely or partially composed of the photochromic molecules, namely, oligomeric stilbenes containing EW/ED groups and a polyester functionalized with pendant azobenzene moieties having EW/ED groups . The authors attributed the drain current modulation not only to the cis–trans isomerization of the photochromic moieties but also to the charge trapping of the photogenerated charge carriers by the EW/ED groups.…”

Section: Introductionmentioning

confidence: 99%

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Highly UV‐Sensitive and Responsive Benzothiophene/Dielectric Polymer Blend‐Based Organic Thin‐Film Phototransistor

Ljubic

Smithson

et al. 2015

Adv Elect Materials

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sensors, re-writable memory devices, radio frequency identifi cation tags, etc. [ 1,2 ] Performance of OTFTs has been significantly improved in the last decade through engineering of the materials, interfaces, and architecture of devices. [3][4][5] Reported maximum charge carrier mobilities reached 17.2 cm 2 V −1 s −1 for vacuum-deposited asymmetric tridecyl (C 13 )-substituted [1]benzothieno [3,2-b][1]benzothiophene (C 13 -BTBT), [ 6 ] 31.3 cm 2 V −1 s −1 [ 7 ] and 43 cm 2 V −1 s −1 [ 8 ] for solution-processed OTFTs based on symmetric C 8 -BTBT, and 10.5 cm 2 V −1 s −1 for solution-processed conductive polymers. [ 9 ] Compared to the FETs made from the amorphous silicon (α-Si) that have a mobility of ≈1 cm 2 V −1 s −1 , these results are very promising for the massive commercialization of OTFTs. Moreover, an understanding of device physics has been achieved through simultaneous experimental and modeling analysis. [ 10 ] Finding new and specifi c functionalities and thus widening the applications of OTFTs is in the main research focus. One of the specifi c functionalities is optical control over OTFT electrical characteristics to attain air-stable photocontrolled transistors, i.e., organic thin-fi lm phototransistors (OTF-PT), with sensing and/ or memory properties. [ 14,15 ] OTF-PTs are four-terminal devices, namely, gate-source-drain-light electrodes where adjustment of the incident light intensity amplifi es the drain current. As a result, OTF-PTs have higher signal-to-noise ratio (higher sensitivity-lower noise), compared to photodiodes [ 14 ] and they are also suitable for application in optical transducers. [ 16 ] OTF-PTs have an advantage over their inorganic counterparts due to the ability to choose from a variety of organic materials to tune the sensing properties within the ultraviolet (UV) and visible light spectrum. However, response times are slower compared with inorganic UV sensors recently reported. [ 17 ] Therefore, the current challenge in the fabrication of OTF-PT with high photocurrent gain is to design and engineer organic sensors and memory devices with properties comparable to common inorganic devices. Important parameters for the fabrication of high quality OTF-PT are operational stability (electrical and photo-), photosensitivity, and retention times (long for memory and short for sensors).So far, photocontrol of OTFTs electrical properties has been achieved through the incorporation of photochromic organic

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Section: Resultsmentioning

confidence: 99%

Section: Wileyonlinelibrarycommentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Highly UV‐Sensitive and Responsive Benzothiophene/Dielectric Polymer Blend‐Based Organic Thin‐Film Phototransistor

Ljubic

Smithson

et al. 2015

Adv Elect Materials

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show abstract

“…This is because of their attractive potentials such as low fabrication cost, large-area processing, and flexibility [1][2][3][4][5]. So far applications such as light emitting [6,7], sensing [8][9][10], logic-gate [11], and photo-switching [12,13] have been developed using these transistors. However, some practical difficulties such as high threshold voltage (V TH ), low field effect mobility (μ eff ) and limited operational stability currently hindering wide application of the OFETs.…”

Section: Introductionmentioning

confidence: 99%