2005
DOI: 10.1002/pssa.200406931
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Photoacoustic and photoluminescence studies of H+ ion‐implanted n‐GaAs

Abstract: The surface of silicon‐doped GaAs (100) grown by the vertical Bridgman method has been implanted with H+ ions at 30 keV for various doses from 1014 to 1017 cm–2 and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantation on GaAs:Si. The results are compared with Raman measurements. All the measurements confirm the sign change of charge carriers at a dose of 1015 cm–2. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Cited by 2 publications
(5 citation statements)
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“…The similarity in the behavior of the PA and PL [4] to that of the EPR signals very clearly demonstrate that there is a change at 10 15 cm À2 dosage. The minimum in g-value at 10 15 cm À2 dosage may be understood as a change in the polarity of charge carriers at this dosage due to change in environment, because EPR has not identified any other defect.…”
Section: Resultsmentioning
confidence: 66%
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“…The similarity in the behavior of the PA and PL [4] to that of the EPR signals very clearly demonstrate that there is a change at 10 15 cm À2 dosage. The minimum in g-value at 10 15 cm À2 dosage may be understood as a change in the polarity of charge carriers at this dosage due to change in environment, because EPR has not identified any other defect.…”
Section: Resultsmentioning
confidence: 66%
“…It has already been discussed in our earlier papers [2,4] that H + ion implantation of n-GaAs would change it into p-GaAs for a particular dosage. This ion implantation passivates the free electron at low doses and at fairly high doses it produces defect complexes, which release holes to convert n-to p-type.…”
Section: Electron Paramagnetic Resonance (Epr)mentioning
confidence: 95%
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