“…The similarity in the behavior of the PA and PL [4] to that of the EPR signals very clearly demonstrate that there is a change at 10 15 cm À2 dosage. The minimum in g-value at 10 15 cm À2 dosage may be understood as a change in the polarity of charge carriers at this dosage due to change in environment, because EPR has not identified any other defect.…”
Section: Resultsmentioning
confidence: 66%
“…It has already been discussed in our earlier papers [2,4] that H + ion implantation of n-GaAs would change it into p-GaAs for a particular dosage. This ion implantation passivates the free electron at low doses and at fairly high doses it produces defect complexes, which release holes to convert n-to p-type.…”
Section: Electron Paramagnetic Resonance (Epr)mentioning
confidence: 95%
“…Various studies on defects in n-GaAs are reported in literature [1][2][3][4] for H + ion implantation. Dharmarasu et al [1], from the Raman results of H + and He + -implanted crystalline n-GaAs (with carrier concentration o4.2 Â 10 17 cm À3 ) reported lattice damages at higher doses.…”
Section: Introductionmentioning
confidence: 99%
“…In our earlier paper [4], effect of 30 keV H + ion implantation (doses 10 14 to 10 17 cm À2 ) on n-GaAs was studied by photoacoustic (PA) and photoluminescence (PL) measurements. It was observed that there is a type conversion at a dose of 10 15 cm À2 from n-to p-type.…”
Section: Introductionmentioning
confidence: 99%
“…The PA spectra [4] were recorded as a function of the wavelength of the incident beam (350-1100 nm) for constant modulation frequency for as-grown and H + ion-implanted samples for various doses from 10 14 to 10 17 cm À2 . The spectra were normalized using the PA signals from carbon black.…”
“…The similarity in the behavior of the PA and PL [4] to that of the EPR signals very clearly demonstrate that there is a change at 10 15 cm À2 dosage. The minimum in g-value at 10 15 cm À2 dosage may be understood as a change in the polarity of charge carriers at this dosage due to change in environment, because EPR has not identified any other defect.…”
Section: Resultsmentioning
confidence: 66%
“…It has already been discussed in our earlier papers [2,4] that H + ion implantation of n-GaAs would change it into p-GaAs for a particular dosage. This ion implantation passivates the free electron at low doses and at fairly high doses it produces defect complexes, which release holes to convert n-to p-type.…”
Section: Electron Paramagnetic Resonance (Epr)mentioning
confidence: 95%
“…Various studies on defects in n-GaAs are reported in literature [1][2][3][4] for H + ion implantation. Dharmarasu et al [1], from the Raman results of H + and He + -implanted crystalline n-GaAs (with carrier concentration o4.2 Â 10 17 cm À3 ) reported lattice damages at higher doses.…”
Section: Introductionmentioning
confidence: 99%
“…In our earlier paper [4], effect of 30 keV H + ion implantation (doses 10 14 to 10 17 cm À2 ) on n-GaAs was studied by photoacoustic (PA) and photoluminescence (PL) measurements. It was observed that there is a type conversion at a dose of 10 15 cm À2 from n-to p-type.…”
Section: Introductionmentioning
confidence: 99%
“…The PA spectra [4] were recorded as a function of the wavelength of the incident beam (350-1100 nm) for constant modulation frequency for as-grown and H + ion-implanted samples for various doses from 10 14 to 10 17 cm À2 . The spectra were normalized using the PA signals from carbon black.…”
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