Photoacoustic determination of the recombination velocity at the AlGaAs/GaAs heterostructure interface

Abstract

Photoacoustic study of the effect of aluminum content on the thermal and thermomechanical properties of Al y Ga 1−y As on GaAs in the range (0y1)The surface recombination velocity at the AlGaAs/GaAs single heterostructure interface is determined using the photoacoustic technique. We analyze different heat generation mechanisms for this type of heterostructure with different Al composition and thickness of the AlGaAs layers. A theoretical model of the photoacoustic signal generation in the heat transmission detection configuration was developed. The values of the surface recombination velocity obtained by comparing the theoretical expressions with the experimental results are in good agreement with the literature reported ones. The results were also correlated with those of photoluminescence measurements in the same samples.

On the Photoacoustic Characterization of Semiconductors: Influence of Carrier Recombination on the Thermodiffusion, Thermoelastic and Electronic Strain Signal Generation Mechanisms

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Effect of interface recombination on the efficiency of intracavity double diode structures

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Effect of Te doping on thermal diffusivity of Bi2Se3 crystals: A study using open cell photoacoustic technique

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