Photobias Instability of High Performance Solution Processed Amorphous Zinc Tin Oxide Transistors

Kim, Yoon Jang; Yang, Bong Seob; Oh, Seung June; Han, Sang Jin; Lee, Hong Woo; Heo, Jaeyeong; Jeong, Jae Kyeong; Kim, Hyeong Joon

doi:10.1021/am400110y

Cited by 63 publications

(50 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[25] Nonetheless, the In-based metal oxides are not the ideal semiconductor materials for large-area integrated circuits because of the scarcity of In. [26][27][28] As a result, ZnO is usually adopted as the alternative "In-free" active material for metal-oxide-based electronic devices. [29][30][31] In this regard, the electrospun ZnO NFs have the great potential to satisfy all the stringent requirements for practical applications in large-area, low-cost, and high-performance integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

View full text Add to dashboard Cite

on. [1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme. [9,19] Although hydrothermal methods are seem to be the simple process and capable to produce large amounts of 1D nanomaterials with the relatively low cost, they are challenging to precisely control the diameter, morphology, and crystal structure of the nanomaterials obtained, seriously influencing their chemical and physical properties, eventually limiting their practical utilizations. [13,20] In general, electrospinning is well accepted to its simplicity and versatility to yield organic, inorganic or composite nanofibers (NFs). [21,22] This technique can not only fabricate NFs with well-controlled properties, such as the excellent crystallinity, homogeneous chemical composition, and uniform diameters but also deliver the high throughput Although significant progress has been made towards using ZnO nanofibers (NFs) in future high-performance and low-cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple onestep electrospinning process (i.e., without hot-press) is presented to obtain controllable ZnO NF networks to achieve high-performance, large-scale, and low-operating-power thin-film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 °C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (V th ) of ≈0.9 V, a low leakage current of ≈10 −12 A, and a superior on/off current ratio of ≈10 6 , corresponding to one of the best-performed ZnO NF devices reported to date. When high-κ AlO x thin films are employed as gate dielectrics, the source/drain voltage (V DS ) can be substantially reduced by 10× to a range of only 0-3 V, along with a 10× improvement in mobility to a respectable value of 0.2 cm 2 V −1 s −1 . These results indicate the potential of these nanofibers for use in next-generation low-power devices. Thin-Film Transistors

show abstract

Section: Introductionmentioning

confidence: 99%

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…It is widely known that a combination of additional materials, annealing, or post-deposition processing at high temperature is effective at improving transistor performance. For example, Kwack and W.-S. Choi 2 and Kim et al 3 have reported solution-processed Zinc tin oxide (ZTO) TFTs with carrier mobilities of 4.9 and 6.0 cm 2 /Vs using a high temperature annealing processes at 300 C and 500 C, respectively. Much research is now focused on postdeposition processing as part of an effort to keep the temperature below 150 C. Indium zinc oxide (IZO) TFTs have achieved a mobility of 1.8 cm 2 /Vs by using high-pressure annealing (HPA) following thermal annealing at 220 C. 4 Similarly, UV light irradiation 5 and microwave-assisted annealing 6 have been adopted as useful post-deposition processes.…”

mentioning

confidence: 99%

Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors

Jeong

Pearson

Lee

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. The effects of hydrogen plasma treatment on the active layer of top-contact zinc oxide thin film transistors are reported. The transfer characteristics of the reference devices exhibited large hysteresis effects and an increasing positive threshold voltage (V TH ) shift on repeated measurements. In contrast, following the plasma processing, the corresponding characteristics of the transistors exhibited negligible hysteresis and a very small V TH shift; the devices also possessed higher field effect carrier mobility values. These results were attributed to the presence of functional groups in the vicinity of the semiconductor/gate insulator interface, which prevents the formation of an effective channel. V C 2014 AIP Publishing LLC.[http://dx

show abstract

“…As the annealing temperature increased, the relative area of peak 3 decreased, which may indicate that the hydroxyl groups (M-OH) were converted to oxides [22]. Simultaneously the O 1s peaks shifted toward the lower binding energy, it was reasonable to assume that the hydrolyzed oxide converted into oxide AIZO as the temperature increased [23].…”

Section: Resultsmentioning

confidence: 99%

“…Figure 4 Moreover, the 300 o C annealed films contained the largest concentration of OH groups as shown in figure 4. This may be due to the more incomplete decompositions of organic ligands and metal salts existed at low annealing temperatures, which would cause the excessive incorporation of Cl and N ions and OH groups [22]. With increasing the annealing temperature, impurities with Cl and N ions were reduced substantially with the enhanced decomposition and evaporation.…”

Section: Resultsmentioning

confidence: 99%