Photocapacitance characterization of deep levels in InGaAs/GaAsSb type-II MQW photodiodes

Balasekaran, Sundararajan; Ishiguro, Hiroshi; Iguchi, Yasuhiro; Katsuyama, T.; Sasaki, Tetsuo

doi:10.1016/j.infrared.2017.11.025

Infrared Physics & Technology

2018

DOI: 10.1016/j.infrared.2017.11.025

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Photocapacitance characterization of deep levels in InGaAs/GaAsSb type-II MQW photodiodes

Sundararajan Balasekaran

Hiroshi Ishiguro

Yasuhiro Iguchi

et al.

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2024

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Cited by 2 publications

References 16 publications

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Study of new types of detectors in the SWIR: extension of the operating band beyond 1.7 μm

Roubichou,

Reverchon,

Evirgen

et al. 2024

Infrared Technology and Applications L

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In recent years, an interest in the detection of the Short Wave Infra-Red (SWIR) band has grown. In these wavelengths, we benefit both from the properties of the visible and thermal infrared, offering new information and a different contrast to the image. In the defense field, this band offers the possibility of passive and active imaging, as well as the detection of laser or thermal radiation from bodies above ambient temperature. The state-of-the-art III-V detectors in the SWIR are InGaAs photodiodes on InP substrate that are limited by a 1.7 µm cut-off wavelength. Super-lattice (SL) based detectors, that have been increasingly studied in recent years, make it possible to reach new cut-off wavelengths. Starting from the InGaAs on InP detector technology that has been mastered for more than ten years by THALES, the III-V Lab we propose to extend the detection range beyond 1.7 µm by introducing a SL in the active region of an InGaAs photodiode. We will present the results obtained up to 2.5 µm, as well as the solutions implemented to limit the carrier localization in the super-lattice and the associated QE degradation.

show abstract

Study of new types of detectors in the SWIR: extension of the operating band beyond 1.7 μm

Roubichou,

Reverchon,

Evirgen

et al. 2024

Infrared Technology and Applications L

View full text Add to dashboard Cite

show abstract

Study of new types of detectors in the SWIR: extension of the operating band beyond 1.7μm

Roubichou,

Reverchon,

Evirgen

et al. 2024

X-Ray, Optical, and Infrared Detectors for Astronomy XI

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In recent years, an interest in the detection of the Short Wave Infra-Red (SWIR) band has grown. On the ground, the development of telescopes (ELTs) requires the construction of large focal planes in the SWIR for imaging, spectroscopy, or wavefront sensing applications. In space, the SWIR band can have many applications whether for communications or for imaging space and earth. The state-of-the-art III-V detectors in the SWIR are InGaAs photodiodes on InP substrate that are limited by a 1.7 µm cut-off wavelength. Superlattice (SL) based detectors, that have been increasingly studied in recent years, make it possible to reach new cut-off wavelengths. Starting from the InGaAs on InP detector technology that has been mastered for more than ten years by THALES, the III-V Lab we propose to extend the detection range beyond 1.7 µm by introducing a SL in the active region of an InGaAs photodiode. We will present the results obtained up to 2.6 µm, as well as the solutions implemented to limit the carrier localization in the superlattice and the associated QE degradation. We will also discuss the consequence of minority carrier lifetime on the performance and the consequence of localization on MTF.

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Photocapacitance characterization of deep levels in InGaAs/GaAsSb type-II MQW photodiodes

Cited by 2 publications

References 16 publications

Study of new types of detectors in the SWIR: extension of the operating band beyond 1.7 μm

Study of new types of detectors in the SWIR: extension of the operating band beyond 1.7 μm

Study of new types of detectors in the SWIR: extension of the operating band beyond 1.7μm

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