Photocapacitance of GaAs thin-film epitaxial structures

Gorev, Nikolai B.; Kodzhespirova, Inna F.; Privalov, E.N.; Khuchua, Nina; Khvedelidze, Levan; Shur, M. S.

doi:10.1016/j.sse.2004.10.004

Cited by 5 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Photocapacitance of solids is not unknown and has been observed before. [10][11][12] An amorphous silicon sample that changes capacitance upon IR illumination was reported in Ref. 13.…”

Section: A Detection Mechanismmentioning

confidence: 99%

Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

Bandyopadhyay

2014

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inRoom-temperature operation of a titanium supersaturated silicon-based infrared photodetector Appl. Phys. Lett. Nanomechanical switch fabrication by focused-ion-beam chemical vapor depositionCharacteristics of a capacitive infrared photodetector that works at room temperature by registering a change in capacitance upon illumination are reported. If used in an ideal resonant inductor-resistor-capacitor circuit, it can exhibit zero dark current, zero standby power dissipation, infinite detectivity, and infinite light-to-dark contrast ratio. It is also made frequency-selective by employing semiconductor nanowires that selectively absorb photons of energies close to the nanowire's bandgap. Based on measured parameters, the normalized detectivity is estimated to be $3 Â 10 7 Jones for 1.6 lm IR wavelength at room temperature. V C 2014 AIP Publishing LLC.

show abstract

“…Photocapacitance of solids is not unknown and has been observed before. [10][11][12] An amorphous silicon sample that changes capacitance upon IR illumination was reported in Ref. 13.…”

Section: A Detection Mechanismmentioning

confidence: 99%

Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

Bandyopadhyay

2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Capacitive infrared photodetector for room temperature operation

Bandyopadhyay

Anderson

2013

Applied Physics Letters

View full text Add to dashboard Cite

We report a self-assembled semiconductor nanowire photodetector that detects infrared light at room temperature by registering a change in capacitance upon illumination. Its light-to-dark capacitance ratio exceeds 2.5 at a signal frequency of 75 kHz and gradually decays to 1 beyond 200 kHz. This detector also exhibits “frequency-selectivity” since it is more responsive to photons with energies close to the nanowire's effective bandgap than to higher energy photons. Such a light-sensitive capacitor, unlike a light-sensitive resistor, can be used in a resonant parallel inductor-capacitor circuit to yield giant light-to-dark contrast ratio even when the light-to-dark capacitance ratio is relatively small.

show abstract