Photocapacitance studies of deep levels in zinc sulphide

Abstract

Photocapacitance measurements using the double light source steadystate method have been made on ZnS single crystals. The Schottky diodes were made by evaporating a metal contact onto a chemically cleaned ZnS surface. Levels were found at 0.9 and 2.0 eV below the conduction band and 0.8 eV above the valence band in both melt-grown and iodine-transported material. An additional level at 1.6 eV below the conduction band occurred in the iodinetransported material.

Thermal growth and luminescence of wurtzite ZnS nanowires and nanoribbons

“…According to the low content of metallic impurities in the precursor, this green band is more likely to come from vacancy states, although impurities cannot be discarded. The orange bands at 2.0 and 1.8 eV have been ascribed to deep impurity levels [37]. No emission in the near band edge region is observed in the starting material.…”

Structure dependent photoluminescence and magnetic properties of Co:ZnS nanostructures

“…Likewise, the spectrum of S2 could be deconvoluted into five peaks, which are all correlated with the defect states and surface states of Co:ZnS (shown in figure 4(b)). The origin of the red emission at ∼695 nm is not clear and has been ascribed to deep impurity levels by Zheng et al [33]. Compared with S3, the intensities of the emissions for S2 decrease considerably.…”

Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

“…Photocapacitance of solids is not unknown and has been observed before. [10][11][12] An amorphous silicon sample that changes capacitance upon IR illumination was reported in Ref. 13.…”