Photochemical study of metal infiltrated e-beam resist using vapor-phase infiltration for EUV applications

Hwang, Su Min; Gummadavelly, Aditya Raja; Le, Dan N.; Jung, Yong Chan; Veyan, Jean-François; Tiwale, Nikhill M.; Nam, Chang‐Yong; Ahn, Jinho; Kim, Jiyoung

doi:10.1117/12.2601033

Cited by 2 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 7(c) compares the change in thickness (Δt or developed thickness) of pure and modified HSQ after 60 s of developing time at different electron exposure doses, in which Δt of 0 nm indicates no thickness reduction. 34) After being exposed to a dose value of 300 mC cm −2 using 80 eV electrons, the change in thickness of Al-infiltrated was lower than pristine HSQ, suggesting an improvement in etch resistance of the modified material. The 3D topographic plots of film thickness remained on the substrate after the development process, as shown in Figs.…”

Section: Vapor-phase Infiltration (Vpi)mentioning

confidence: 90%

“…This new hybrid resist synthesis can be achieved by either infiltrating vapor-phase inorganic precursors into conventional spin-on resists thin films or directly vapor-depositing inorganic-organic hybrid resist thin films as photoresists for the next generation of EUVL technology. [34][35][36][37] Herein, we discuss these recent advances in applications of ALD and its analogs to address current challenges in EUVL in terms of photoresist materials and pattern quality. Although some of the studies are still in their early stages, the initial results have shown great potential and encourage the future development of novel, vapor-phase chemical processing for developing new, improved EUV photoresists to further advance EUVL.…”

Section: S µmentioning

confidence: 99%

“…11,54) Similarly, Hwang et al utilized PMMA and hydrogen silsesquioxane (HSQ) as testing vehicles in their infiltration study using pure metal elements rather than metal oxide. 34) To evaluate the modified resist performance, the authors emulated the EUV exposure conditions by using electrons with similar energy to EUV photons. Figure 7(c) compares the change in thickness (Δt or developed thickness) of pure and modified HSQ after 60 s of developing time at different electron exposure doses, in which Δt of 0 nm indicates no thickness reduction.…”

Section: Vapor-phase Infiltration (Vpi)mentioning

confidence: 99%

See 2 more Smart Citations

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Park

Hwang

et al. 2023

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5nm node logic and memory devices using EUVL (λ=13.5nm). However, trade-off between resolution, sensitivity, and roughness in the conventional resists pose a critical challenge in the race towards device downscaling to 1nm node. While great efforts are being made to improve spin-on EUV photoresist performance, there has been emergence of new approaches focused on developing novel resists via vapor-phase processing routes, such as atomic layer deposition (ALD) and its analogs. This review summarizes recent advances in EUVL photoresist development based on ALD and its derivative techniques, which include ALD-based inorganic-organic dry resists and hybrid resists synthesized by infiltrating conventional spin-on resists. Despite being in the early stage, initial studies have shown the great potential of ALD applications in EUVL photoresist development.

show abstract

Section: Vapor-phase Infiltration (Vpi)mentioning

confidence: 90%

Section: S µmentioning

confidence: 99%

Section: Vapor-phase Infiltration (Vpi)mentioning

confidence: 99%

See 1 more Smart Citation

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Park

Hwang

et al. 2023

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Subsequently, an approach for improving the resist sensitivity by Hfinfiltration has also been introduced. 200 In a recent report, infiltration of various metal oxides into a high sensitivity resist was reported with a resolution ∼30 nm. 201 While controllability and ease of implementation being the high points, further maturation of this resist platform is required.…”

Section: Infiltration Synthesis Of Hybrid Resistsmentioning

confidence: 99%

“…Patterned features with ∼30 nm linewidth were transferred in an Si substrate to fabricate Si fins with an aspect ratio of ∼17. Subsequently, an approach for improving the resist sensitivity by Hf-infiltration has also been introduced 200 . In a recent report, infiltration of various metal oxides into a high sensitivity resist was reported with a resolution ∼30 nm 201 .…”

Section: Metal-containing Resists In Electron Beam Lithography: An Ov...mentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

View full text Add to dashboard Cite

Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

show abstract

Photochemical study of metal infiltrated e-beam resist using vapor-phase infiltration for EUV applications

Cited by 2 publications

References 0 publications

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Contact Info

Product

Resources

About