Photoconducting response on bending of individual ZnO nanowires

Gao, Peng; Wang, Z. Z.; Liu, Kaihui; Xu, Zhikun; Wang, W. L.; Bai, Xuedong; Wang, E. G.

doi:10.1039/b816791e

Cited by 93 publications

(97 citation statements)

References 39 publications

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“…ZnO nanowires have been used as active components in gas sensors [167,168,433], visible light sensors [434], visible-blind UV sensors [95,280,435], biosensors [94,436], and strain sensors [437]. These depend on the resistance or piezoresistance change of the nanowires [438], or the barrier height change at the contact [15-17, 437, 439], or are based on the heterostructured p-n diodes [434].…”

Section: Sensorsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Sensorsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…19 Recently, the photoconducting response at different degrees of straining of a ZnO nanowire has been studied using in situ transmission electron microscopy. 20 Although a lot of progress has been made in each research field as stated above, very limited research has been conducted on the localized and quantitatively controlled coupling of the piezoelectric effect and photoexcitation on a ZnO nanowire nanodevice.In this paper, by introducing a controllable stepping strain and using a focused laser beam, we have investigated the localized coupling between the piezoelectric effect and photoexcitation of ZnO microwire devices that exhibit various controlled electrical transport characteristics. By using microwire devices with SchottkyϪOhmic, OhmicϪOhmic, and SchottkyϪSchottky contacts, we have demonstrated the finetuning of contact characteristics, such as from Schottky to Ohmic or from Ohmic to Schottky, by varying the individual contributions made by piezoelectricity and photoexcitation at local contacts.…”

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confidence: 99%

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confidence: 99%

Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects

et al. 2010

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S emiconductor nanowires are the fundamental materials for fabricating a wide range of nanodevices. 1Ϫ5 In the oxide family, ZnO nanowires and nanobelts have been widely studied as a key 1D oxide nanomaterial for numerous applications. Due to the unique piezoelectric and semiconducting coupled properties, a range of novel nanodevices of ZnO have been developed, such as nanogenerators, 6Ϫ9 piezoelectric field effect transistors, 10 piezoelectric diode, 11 and strain sensors. 12 A direct band gap of 3.4 eV and a large exciton binding energy (60 meV) at room temperature make ZnO a prominent candidate in optical applications, such as an ultraviolet detector, 13Ϫ16 optical pumped laser, 17,18 and light emitting diodes. 19 Recently, the photoconducting response at different degrees of straining of a ZnO nanowire has been studied using in situ transmission electron microscopy. 20 Although a lot of progress has been made in each research field as stated above, very limited research has been conducted on the localized and quantitatively controlled coupling of the piezoelectric effect and photoexcitation on a ZnO nanowire nanodevice.In this paper, by introducing a controllable stepping strain and using a focused laser beam, we have investigated the localized coupling between the piezoelectric effect and photoexcitation of ZnO microwire devices that exhibit various controlled electrical transport characteristics. By using microwire devices with SchottkyϪOhmic, OhmicϪOhmic, and SchottkyϪSchottky contacts, we have demonstrated the finetuning of contact characteristics, such as from Schottky to Ohmic or from Ohmic to Schottky, by varying the individual contributions made by piezoelectricity and photoexcitation at local contacts. On the basis of this concept, a design of electric transport properties is demonstrated. This study reveals a new principle for controlling the coupling among mechanical, electrical, and optical properties, which can be the basis for fabricating piezo-photonic-electronic nanodevices, which is referred to as piezophototronics. RESULTS AND DISCUSSIONOur device was fabricated using a single micro/nanowire of ZnO (see the Experimental Methods for details). First, we investigated the photoresponse of a microwire device with photoexcitation at different locations along the ZnO microwire. Figure 1a is a superimposed optical image taken from a ZnO microwire device with the laser spot focused at different positions, as schematically shown on the right-hand side. Points P1, P2, and P3, respectively, represent the positions at the left-hand metalϪZnO contact, central channel region, and right-hand metalϪZnO contact.

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“…The pioneering work was reported on the field emission coupled with semiconducting property from CuO nanobelt arrays [9]. Such a kind of multifunctional coupling is not only significant for applications of CdS NWs in field emission and optoelectronics technologies, but also could throw light on their fundamental research, such as the internal electronic structure, the surface effect, and the optoelectronic transport [10].…”

Section: Introductionmentioning

confidence: 99%

Photo-enhanced field electron emission of cadmium sulfide nanowires

Zhang

Liu

et al. 2011

Sci. China Phys. Mech. Astron.

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The response of field electron emission of cadmium sulfide (CdS) nanowires (NWs) to visible light has been investigated. It is found that, upon light illumination, the turn-on voltage drops, emission current increases obviously, and the Fowler-Nordheim behavior deviates from a straight line. A process of field emission coupled with semiconducting properties of CdS NWs is proposed. Photon-excited electron transition from the valence band to the conductance band of CdS nanowires increases the quantity of emitting electrons, and the photoemission decreases the effective work function of CdS emitters, which largely enhances the field emission performance. The response of field emission of CdS NWs to light illumination suggests an approach for tuning field emission of semiconductor emitters. field electron emission, optical coupling, CdS nanowires, semiconductor emitters PACS: 85.45.Db, 81.07.-b, 78.66.Li

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Photoconducting response on bending of individual ZnO nanowires

Cited by 93 publications

References 39 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects

Photo-enhanced field electron emission of cadmium sulfide nanowires

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