Photoconductive and Photoelectromagnetic Effects in InSb

Kurnick, Sarah; Zitter, R. N.

doi:10.1063/1.1722357

Cited by 124 publications

(14 citation statements)

References 10 publications

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“…Computed difference between radiation intensities in an lnSb sample near the illuminated and unilluminnted surfaces versus sample thickness obtained by using (4), assuming 3, = 6.6 pm, n = 4.01, x = 0.059, n1 = 1.0, n2 = 1. 5 for different values of sample thickness. The obtained results are shown on Fig.…”

Section: The Distribution Of Radiation Intensity In a Thin Semiconducmentioning

confidence: 99%

The Possible Existence of the Interference Photomagnetoelectric Effect

Nowak

1982

phys. stat. sol. (a)

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The theory of the PME effect is extended to the case of a thin sample in which the interference of the radiation reflected from the sample surfaces can be marked. The obtained results suggest the possible existence of a so‐called interference photomagnetoelectric effect. The new, additional PME mechanism should be useful in optimization of the infrared PME detectors. It should also give the possibility of carrying out an electric method of measuring refractive indexes of semiconductors. As an example the dependences of the PME effect on sample thickness and wavelength of radiation are calculated for InSb.

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Section: The Distribution Of Radiation Intensity In a Thin Semiconducmentioning

confidence: 99%

The Possible Existence of the Interference Photomagnetoelectric Effect

Nowak

1982

phys. stat. sol. (a)

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“…The dashed ciirvo shows the correction t,o the top solid curve resulting from 50n,, light reflection from the back surfewe. (1) s = lo4, t = lo5;(2) lo4, lo6; (3) 3.2 1. : :.' 104, 105; (4) 105, 3.2 ;.…”

mentioning

confidence: 99%

The dependence of photoconductive and photoelectromagnetic effects on slab thickness in InSb at room temperature

Hanus

Oszwałdowski

1976

Phys. Stat. Sol. (a)

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Results of theoretical and experimental investigations of the dependence of photoconductive and photomagnetic effects on slab thickness in InSb at room temperature are given. The theoretical results are presented in a graphical form as a dependence of both effects on the ratio of sample thickness d to the ambipolar diffusion length L, with surface recombination velocities as parameters. The comparison of the theoretical results with experimental data is carried out for thin melt‐grown InSb layers of thickness ranging from 0.8 to 30 μm. For undoped InSb at room temperature this thickness range covers both so‐called “thin slabs” (d/L ≤ 1) and “thick slabs” (d/L ≥ 1). The experimental results obtained are in good agreement with the theoretical dependences.

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“…ni (9) For simple idealized generation functions G,,(t), ln*I < 1, B = 0 there exist analytical solutions of the system (8) or (9) and (3) [18,191. We, however, must solve the equations numerically, since with B + 0 due to the magnetoconcentration n* is, in general, not small, the PEM effect must be taken into account and the generation function of the photo-injected carriers cannot be approximated by a Dirac's delta distribution in our case.…”

Section: Gdt)mentioning

confidence: 99%

Lifetime of Charge Carriers in Intrinsic Indium Antimonide

Bruhns

Kruse

1980

Physica Status Solidi (b)

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The lifetime of addit,iorial photoinjected electron-hole pairs in intrinsic InSb a t 291 K is investigated by measuring the photoconductive (PC) decay. Apart from studying the usual PC-decay an arrangement is used with superimposed magnetic field transverse t o the electric field. Depending on the direction of the magnetic field the photoinjected plasma is either driven into the sample's bulk or travels parallel t o the illuminated surface. The Anger-lifetime is evaluated from the measurements by a numerical magnetohydrodynamical simulation taking into account surface recombination as well as the Suhl profile of the intrinsic plasma. A lifetime of t = (57 3) ns is found which is independent of the magnetic field up t'o 2.3 T. Die Lebensdauer photoinjizierter Elektron-Loch-Paare wird in eigenleitendem InSb bei einer Temperatur von 291 K iiber das Abklingen der Photoleitung bestimmt. Neben Untersuchungen mit der iiblichen Konfiguration wird ein zusatzliches transversales magnetisches Feld benutzt. Je nach Richtung dieses Feldes kann so das photoinjizierte Plasma diirch die Lorentzkraft in die Probe hineingetrieben oder parallel zur beleuchteten Oberfltiche verschoben werden. Die Auger-Lcbensdauer wird dnrch eine numerische, magnetohydrodynamische Simulation der Experimente bestimmt. Dabei werden die Oberflaehenrekombination und das Suhl-Profil des eigenleitenden Plasmas beriicksichtigt. Es ergibt sich eine Lebensdauer von (57 & 3) ns, die im untorsnchten Bereich von 0 bis 2,3 T unabhangig vom magnetischen Feld ist.

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Photoconductive and Photoelectromagnetic Effects in InSb

Cited by 124 publications

References 10 publications

The Possible Existence of the Interference Photomagnetoelectric Effect

The Possible Existence of the Interference Photomagnetoelectric Effect

The dependence of photoconductive and photoelectromagnetic effects on slab thickness in InSb at room temperature

Lifetime of Charge Carriers in Intrinsic Indium Antimonide

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