Photoconductive UV detectors on sol–gel-synthesized ZnO films

Basak, Durga; Amin, G.A.M.; Mallik, Biswanath; Paul, Goutam; Sen, Shrabanee

doi:10.1016/s0022-0248(03)01304-6

Cited by 218 publications

(132 citation statements)

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“…The electrical conductivity and optical properties of ZnO thin films have been associated with the increase of (002)-orientation degree of its hexagonalwurtzite crystal structure 2,[13][14] . Transparent and conductive (002)-oriented ZnO films have been prepared by sol-gel spin-coating, however, the use of single crystal substrates and doping elements have been required [15][16][17] . In addition, undoped and (002)-oriented ZnO films grown on amorphous substrates by sol-gel have also been reported to show relatively attractive electrical and optical properties 18,19 .…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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Zinc oxide (ZnO) films were prepared on amorphous quartz substrates by sol-gel spin-coating using Zn(CH 3 COO) 2 •2H 2 O precursor. Isopropanol, ethanol and 2-methoxyethanol were used as solvents. The film drying temperature was kept constant at 200 ºC and the annealing temperature was varied from 400 to 800 ºC. Highly transparent and (002)-oriented hexagonal wurtzite-type ZnO films were obtained using isopropanol solvent. The ZnO films prepared at T anneal = 600 ºC showed the highest (002) preferential orientation, however it was not the significant feature to achieve low resistivity. The uniform and (002)-oriented ZnO films prepared at T anneal = 400 ºC display the highest transmittance (>93% in the visible region) and the lowest resistivity (7.1 Ω•cm).

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Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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“…Fig. 4(b) also shows that there is a small rise from 450 nm to 600 nm, which is due to the photo-generated carriers excited from the deep-level traps [6].…”

Section: Resultsmentioning

confidence: 90%

“…As a conclusion, the photocurrent mainly results from the conduction-band accumulation of electrons and the gradual reduction of the grain-boundary barrier height during oxygen adsorption [10]. In our opinion, it is not appropriate to calculate the photoconductivity (R λ ) of photoconductive detectors based on polycrystalline ZnO films using R λ = I /P λ , (where I is the photocurrent and P λ is the incident power) [6]. It is also not appropriate to perform spectral response measurements on normalizing light-power density at different wavelengths [2].…”

Section: Resultsmentioning

confidence: 99%

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Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films

Zheng

Li²

2008

Open Physics

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Abstract:Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550˚C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

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“…9) Therefore, several investigations have prepared UV photodetectors using sol-gel synthesized ZnO thin films. 10,11) However, how the crystallization of sol-gel ZnO thin film affects the optoelectronic characteristics has still not been investigated. In addition, almost all the photodetector devices used interdigital (IDT) circular structures as contact electrodes, 12,13) and the effect of the spiral configuration is worthy of further investigation.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method

et al. 2009

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ZnO thin films were prepared on a quartz substrate by sol-gel method and a UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact with 30 nm IrO 2 electrodes. The ZnO thin films were crystallized at various crystallized temperature (600$700 C) for 1 hour in pure oxygen atmosphere, and were then analyzed by X-ray diffraction (XRD) and the scanning electron microscopy (SEM) to investigate the thin film crystallized structures. From photoluminescence (PL) and I-V measurement, the 650 C thin film not only possessed a better crystallization but also had nanopillar structures that revealed an excellent characteristic of UV photodetector.

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Photoconductive UV detectors on sol–gel-synthesized ZnO films

Cited by 218 publications

References 20 publications

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films

Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method

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