Photoconductivity and μτ-products in a-Si:H — compatibility with various defect models

Schumm, G.; Abel, C.-D.; Bauer, G.H.

doi:10.1016/s0022-3093(05)80128-0

Cited by 28 publications

(6 citation statements)

References 7 publications

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“…But, as mentioned before, the material becomes more intrinsic with increasing Ge content because the dark Fermi level shifts towards midgap. The anticorrelation of the p~ products with respect to the dark Fermi level is well known from a-Si:H. 16 Both effects combined explains the less-pronounced reduction in the hole ptz product. The a-Si:H sample is not prepared in the series of the other samples, therefore no deductions could be made on the p~ data point of this sample.…”

Section: Results For Undoped A-si_ge: Hmentioning

confidence: 86%

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Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si_1–X Ge_X: H alloys

Abel

Bauer

1993

Progress in Photovoltaics

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The steady‐state photocarrier grating technique is analysed with respect to deviations from local charge neutrality. We present a generalized expression for the normalized photoresponse β as a function of the grating period as well as of the external electric field; the transport is characterized in the sense of bipolar and ambipolar, diffusion and drift displacement, respectively. Experimental data for undoped a‐Si: H, especially the variation of the β coefficient with the external electric field, are discussed and fitted by the generalized equation. the effective dielectric relaxation time, which takes the trapped photogenerated majority carriers into account, is found to be responsible for ambipolar transport in undoped a‐Si: H in the low electric field regime. Further, the μτ‐products of electrons and holes in a‐Si1‐x Gex: H alloys are deduced experimentally. the low‐gap alloys are an appropriate candidate for photovoltaic applications.

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Section: Results For Undoped A-si_ge: Hmentioning

confidence: 86%

“…The transport and recombination model used is based on multiple trapping and has been applied successfully for the simulation of steady-state secondary photoconductivity. 16 The main controversal parameter, the local electric field, is found to be spatially dependent, especially in the low external electric field regime ( Fig. 4).…”

Section: Generalized Theorymentioning

confidence: 92%

Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si_1–X Ge_X: H alloys

Abel

Bauer

1993

Progress in Photovoltaics

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“…The increase in structural order with the increase in substrate temperature assists in the amorphous to microcrystalline transition and also results in an increase of the deposition rate. 12 The n n product is observed to increase with T s . 11 In Fig.…”

Section: Resultsmentioning

confidence: 92%

Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures

Roy

Das

Longeaud

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inElectronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition Effects of substrate temperature on structural properties of undoped silicon thin films Optical and transport properties of amorphous and microcrystalline silicon films prepared by excimer laser assisted rf glow-discharge deposition J. Vac. Sci. Technol. A 16, 436 (1998); 10.1116/1.581041 Microwave-induced low-temperature crystallization of amorphous silicon thin filmsIntrinsic silicon thin films have been deposited with high and low dilution of hydrogen in silane by radio frequency powered plasma enhanced chemical vapor deposition method at varying substrate temperatures (200°CрT s р370°C). Structural and transport properties of these films have been studied. With high hydrogen dilution, all the films are microcrystalline over the range of T s investigated. The grain size ͑ϳ300 Å͒ does not change with T s but the diffusion length of minority carriers decreases from 200 to 90 nm. With low hydrogen dilution a clear transition from amorphous to microcrystalline phase occurs with increase in T s . The grain size increases from 88 to 350 Å for the microcrystalline films along with an increase in diffusion length from 90 to 135 nm. The correlation between the structural and transport properties are discussed in terms of hydrogen incorporation in the films. We conclude that low T s with high hydrogen dilution and high T s with low hydrogen dilution are two possible combinations for deposition of device quality microcrystalline films.

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“…Recombination, in principal possible via each localized state, results from the rate differences for capture and thermal reemission. This transport/recombination model explains the steady-state secondary photoconductivity as a function of temperature, illumination intensity as well as of dark-Fermi-level position [9]. The solution of SSPG in this way is self-consistent and requires no approximations.…”

Section: Numerical Simulation Of Sspg / Sspcmentioning

confidence: 93%

Simulation of the Steady-State Photocarrier Grating Method Applied to Amorphous Materials

Abel

Bauer

1992

MRS Proc.

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General features of the steady-state photocarrier grating technique applied to amorphous semiconductors are investigated by complete numerical simulation. The results are interpreted with an analytical model which delivers a closed-form expression for fl(A,E) assuming dominance of one carrier type. The variation of the electric field E instead of the grating period A is suggested as an easier and more accurate tool for the experimental technique.

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Photoconductivity and μτ-products in a-Si:H — compatibility with various defect models

Cited by 28 publications

References 7 publications

Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si_1–X Ge_X: H alloys

Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si_1–X Ge_X: H alloys

Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures

Simulation of the Steady-State Photocarrier Grating Method Applied to Amorphous Materials

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Photoconductivity and μτ-products in a-Si:H — compatibility with various defect models

Cited by 28 publications

References 7 publications

Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si1–X GeX: H alloys

Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si1–X GeX: H alloys

Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures

Simulation of the Steady-State Photocarrier Grating Method Applied to Amorphous Materials

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Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si_1–X Ge_X: H alloys

Evaluation of the steady‐state photocarrier grating technique with respect to A‐Si: H and its application to A‐Si_1–X Ge_X: H alloys