No abstract

No abstract

No abstract

No abstract

A quantitative comparison of defect kinetics under high-intensity light-soaking was carried out on a-Si:H and a-SiGe:H. A simple technique that ensures identical experimental conditions (generation rates and generation profiles) in samples of different bandgaps is demonstrated. It is shown that the apparent dependence on bandgap of the susceptibility to light-induced degradation is mainly due to changes in intrinsic carrier concentrations without the need to adhere to any structural changes.