Solution of the μτ problem in a-Si: H

Metastable effects in silicon thin films: Atmospheric adsorption and light-induced degradation

“…In keeping with earlier studies on amorphous [15,16] and microcrystalline [17] silicon, Fig. 4(b) indicates that increases in mu-tau product and r D are linked by the upward shift in the Fermi level, as deeper-lying defect states become filled and no longer act as recombination centres.…”

Metastable dark and photoconductive properties of microcrystalline silicon

“…In these n-type samples, with a majority of hole-recombination centers negatively charged, the observed Fermi-level shifts will leave the hole-recombination center density unaltered so that the hole lifetime is not affected. Similar arguments have been applied to explain the Fermi-level dependent photoconductive properties on a-Si:H [14].…”

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

“…The line is a guide for the eye. The increase in ls product with shift of the Fermi level towards the conduction band, is typically found for a-Si:H [13][14][15][16] and also for lc-Si:H [17][18][19]. The irradiated samples fall well into the typical variation of ls with r d before irradiation (upper full symbols).…”