Photoconductivity in CdS_xSe_1-xfilms

Abstract

Films of CdSxSe1-x with different x values (0<x<1.0) were deposited on glass substrates by co-evaporating CdS and CdSe using the two-zone hot wall technique. Films were highly resistive and polycrystalline in nature with partially depleted grains. Photoconductivity and dark conductivity of the films were measured in the temperature range 230-430 K. Data were analysed by utilizing the grain boundary trapping model with monovalent trapping states to determine the barrier height at the intercrystalline boundary. The variation of barrier height with intensity of the incident photons was studied.

Studies on structural, optical, and photoelectric properties of CdS1-xSexfilms fabricated by selenization of chemical bath deposited CdS films

“…The ratio of photo to dark conductivity is also an important parameter for the photosensitive films. In the earlier studies , researchers found that for polycrystalline CdS x Se 1– x films, the electrical conductivity was mainly governed by the barrier height at the grain boundary region. The barrier height could be sharply decreased with increasing intensity of the incident light, which will cause an increment in electrical conductivity.…”

Photophysics, photoelectrical properties and photoconductivity relaxation dynamics of quantum-sized bismuth(III) sulfide thin films

“…The study of the phenomenon of photoconductivity is an effective method for understanding band structures of investigated semiconducting materials [6,28,37,[39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57]. Using the photoconductivity measurements, information about kinetics of generation, transport and recombination of charge carriers, as well as the density and nature of states in the energy gap due to the presence of impurities and defects can be obtained [39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57].…”

“…Using the photoconductivity measurements, information about kinetics of generation, transport and recombination of charge carriers, as well as the density and nature of states in the energy gap due to the presence of impurities and defects can be obtained [39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57]. The phenomenon of photoconductivity of semiconductors is due to the intrinsic photoeffect i.e.…”

Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

“…However, in recent years, the effect of alloying of CdS, CdSe, and other II-VI group compounds on the PC and PL properties has become a field of much interest. Gupta et al have recently employed the PC studies to determine the barrier height at the inter−crystal− line boundary in CdS x Se 1-x evaporated layers [7]. Similarly, studies on the application of high−speed CdS 0.20 Se 0.80 photo− conductor as line image sensors [8] and the PEC cells made up of chemically deposited coupled films of CdS and CdSe exhib− iting higher sensitization, superior stability and smaller recom− bination rates [9] have also been reported.…”