Photoconductivity in Thin Film of a-(Ge20Se80)0.90Sn0.10

Thakur, Anup; Sharma, Vineet; Chandel, Pradeep; Goyal, Navdeep; Saini, G. S. S.; Tripathi, S. K.

doi:10.1007/s10853-006-7155-x

Cited by 19 publications

(14 citation statements)

References 18 publications

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“…It is also clear from the figure that no maximum in the steady state photoconductivity with temperature has been observed in the measured temperature range. Similar results have been reported [7,15] in various other chalcogenide glasses also. Intensity (F) dependence of steady state photoconductivity (r ph ) has also been studied at room temperature (303 K) to investigate the nature of recombination processes in Ge 20 Se 80Àx In x thin films.…”

Section: Resultssupporting

confidence: 91%

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Electrical properties of a-Ge-Se-In thin films

Sharma

Tripathi

Monga

et al. 2008

Journal of Non-Crystalline Solids

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Section: Resultssupporting

confidence: 91%

“…Photocurrent measurements have been widely used for understanding the defect states in these glassy chalcogenides [7,8]. The study of the photoconductivity (PC) provides an understanding of the photogenerations and transport of the free carriers.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of a-Ge-Se-In thin films

Sharma

Tripathi

Monga

et al. 2008

Journal of Non-Crystalline Solids

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“…This implies photoexcited electron-hole (e-h) pairs significantly increase the concentration of majority carriers of the semiconductor in MSM structure, where the SBs heights also modulate with NIR illumination. 32,33 The slow decay of photocurrent can be fitted with the following equation:…”

Section: Resultsmentioning

confidence: 99%

NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet

Mukherjee

Cai

Tan

et al. 2013

ACS Appl. Mater. Interfaces

234

195

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We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts under a global laser irradiation scheme. The nonlinearship, asymmetric, and unsaturated characteristics of the I-V curves reveal that two uneven back-to-back Schottky contacts are formed. First-principles calculations indicate that the occurrence of defects-induced in-gap defective states, which are responsible for the slow decay of the current in the OFF state and for the weak light intensity dependence of photocurrent. The Schottky photodetector exhibits a marked photoresponse to NIR light illumination (maximum photoconductive gain ∼5.3 × 10(2) % at 4 V) at a wavelength of 808 nm. The significant photoresponse and good responsitivity (∼3.5 A W(-1)) suggests its potential applications as photodetectors.

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“…The glassy materials (Ge 20 Se 80 ) 100Àx Bi x (x = 0, 4 and 10 at.%) have been prepared by quenching technique as described elsewhere [9]. The glassy materials, in the form of ingots, were obtained by breaking the ampoules.…”

Section: Methodsmentioning

confidence: 99%