A new polyimide bearing the functional pendant 9-phenyl-9H-carbazole moieties, poly[2,2-(4,4 0 -di(Nbenzyloxycarbazole)-3,3 0 -biphenylene)propane-hexafluoroisopropylidenediphthalimide] (6F-BAHP-PC PI), has been designed as a functional material for resistance memory devices. The ITO/6F-BAHP-PC PI/Ag memory device exhibits nonvolatile resistive switching (RS) with a high ON/OFF ratio (>10 6 ), long retention time (>6 Â 10 4 s), good endurance, and low power consumption ($100 mW). In situ conductive atomic force microscopy measurements show that the RS of 6F-BAHP-PC PI originates from the formation/rupture of nanoscale conducting filaments.