2020
DOI: 10.1016/j.tsf.2020.138129
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Photodetectors based on controllable growth of large-area graphene films

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Cited by 7 publications
(3 citation statements)
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“…In 2012, Dong et al [ 53 ] exploited the ultrahigh electron mobility of graphene to produce a fast time-response PN junction detector. Using an ultrafast pump probe, they measured the photocurrent response time of the detector as approximately 1.5 ps at room temperature and found that this response time increased to 4 ps at 20 K. With the development of CVD technology, Zheng et al [ 54 ] demonstrated a low-temperature metal-free plasma-enhanced CVD method to grow large-scale graphene to fabricate an all-graphene PD. The detector has a high response rate in the visible range, with the maximum photogenerated current reaching the mA level when the wavelength is 405 nm.…”
Section: Full Graphene Pdsmentioning
confidence: 99%
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“…In 2012, Dong et al [ 53 ] exploited the ultrahigh electron mobility of graphene to produce a fast time-response PN junction detector. Using an ultrafast pump probe, they measured the photocurrent response time of the detector as approximately 1.5 ps at room temperature and found that this response time increased to 4 ps at 20 K. With the development of CVD technology, Zheng et al [ 54 ] demonstrated a low-temperature metal-free plasma-enhanced CVD method to grow large-scale graphene to fabricate an all-graphene PD. The detector has a high response rate in the visible range, with the maximum photogenerated current reaching the mA level when the wavelength is 405 nm.…”
Section: Full Graphene Pdsmentioning
confidence: 99%
“…The response rate and speed of the device are also high, which is exactly what is required for PDs. This is also the reason why the performance of graphene hybrid PDs is higher than those of traditional (semiconductor photodetectors) SCPDs [ 54 ].…”
Section: Graphene Hybrid Pdsmentioning
confidence: 99%
“…Graphene has the highest carrier mobility and its charge density can be tuned by electrostatic gating, as well as by charge transfer from adjacent materials. [ 1–7 ] Semiconducting QDs are excellent light harvesters, present a size‐tunable bandgap [ 8 ] and can be obtained by low‐cost chemical synthesis, resulting highly processable due to their solution dispersibility, and their tunable surface chemistry. [ 9–13 ] Recently, hybrid photoconductive detectors, combining QDs as light absorbers and photocarrier generators with graphene or other 2D materials as charge collectors, have attracted great interest due to their ultrahigh gain and high responsivity (10 7 A W −1 ), enabling high‐sensitivity and gate‐tunable photodetection.…”
Section: Introductionmentioning
confidence: 99%