Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

Cong, Jason; Mao, Luhong; Xie, Sheng; Zhao, Fan; Yan, Dong; Guo, Wenli

doi:10.1109/jphot.2019.2910130

Cited by 6 publications

(3 citation statements)

References 24 publications

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“…A neuron transistor is a high-function multi-input logic device [31] that can be used to realize the same functions as neuron cells. The original neuron transistor was fabricated using a double-poly silicon CMOS process [12][13][14], but it can be implemented using the NDR devices which are realized using the 180-nm UMC CMOS [32,33] process as well.…”

Section: Neuron Transistormentioning

confidence: 99%

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

Zhao

Cong

Guo

et al. 2020

IEICE Electron. Express

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Computer-science-oriented and neuroscience-oriented are two general approaches to developing artificial general intelligence (AGI). In this study, a silicon neuron transistor is developed using the neuroscience approach for AGI applications. Neuronal behavior ("weighted sum and threshold" function) is based on the complementary metal-oxidesemiconductor (CMOS) negative differential resistance (NDR) theory. The neuron transistor is implemented by the UMC 180-nm commercial standard CMOS process, which is beneficial to implement an entire neural network or integrate with other CMOS circuits on the same chip. The neuron transistor is composed of three inputs Vg1, Vg2, and Vg3 and one control terminal Vcon, Vb(load), and Vb(driver). The width of each input is 1.8 μm, and the inputs have 1, 2, and 4 fingers, that is, the weight ratio is 1:2:4. Vb(load) and Vb(driver) enable a neuron transistor to function more closely resembles a real biological neuron, with improved sensitivity and less complicacy compared to a traditional artificial neural network. The neuron MOS transistor was measured at the maximum frequency of 10 kHz. It had extremely low power consumption of <10-4 μW and a miniscule footprint 30 × 15 μm 2. As the process feature size decreases, the chip's operating frequency will increase by one order of magnitude, and its power consumption and footprint will decrease.

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Section: Neuron Transistormentioning

confidence: 99%

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

Zhao

Cong

Guo

et al. 2020

IEICE Electron. Express

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“…The UMC 0.18 µm CMOS process provides six metal layers with intermediate dielectric layers (SiO 2 ) between them. The CMOS process can be used to design not only digital and analog circuits, but also optoelectronic devices [22][23][24]. The major advantage is that signals detected by the detector can be amplified and processed on the chip.…”

Section: On-chip Thz Antennamentioning

confidence: 99%

On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens

et al. 2020

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This study proposes an on-chip terahertz (THz) detector designed with on-chip inset-feed rectangular patch antenna and catadioptric lens. The detector incorporates a dual antenna and dual NMOSFET structure. Radiation efficiency of the antenna reached 89.4% with 6.89 dB gain by optimizing the antenna inset-feed and micro-strip line sizes. Simulated impedance was 85.55 − j19.81 Ω, and the impedance of the antenna with the ZEONEX horn-like catadioptric lens was 117.03 − j20.28 Ω. Maximum analyzed gain of two on-chip antennas with catadioptric lens was 17.14 dB resonating at 267 GHz. Maximum experimental gain of two on-chip patch antennas was 4.5 dB at 260 GHz, increasing to 10.67 dB at 250 GHz with the catadioptric lens. The proposed on-chip rectangular inset-feed patch antenna has a simple structure, compatible with CMOS processing and easily implemented. The horn-like catadioptric lens was integrated into the front end of the detector chip and hence is easily molded and manufactured, and it effectively reduced terahertz power absorption by the chip substrate. This greatly improved the detector responsivity and provided very high gain. Corresponding detector voltage responsivity with and without the lens was 95.67 kV/W with NEP = 12.8 pW/Hz0.5 at 250 GHz, and 19.2 kV/W with NEP = 67.2 pW/Hz0.5 at 260 GHz, respectively.

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“…A RTD is a semiconductor that exhibits controllable negative difference resistance (NDR) regions. The N-shaped I-V characteristics [27,28] of RTDs provide electrical gain for THz oscillator at room temperature [14]. A RTD is realized via the creation of a double-barrier quantum well (DBQW) structure [26] comprising a narrow-bandgap material sandwiched between two thin slabs of a wide-bandgap material.…”

Section: Modelingmentioning

confidence: 99%

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

et al. 2019

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This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.

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Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

Cited by 6 publications

References 24 publications

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

On-Chip Terahertz Detector Designed with Inset-Feed Rectangular Patch Antenna and Catadioptric Lens

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

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