Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing

Zhu, Yixin; Mao, Huiwu; Zhu, Ying; Zhu, Li; Chen, Chunsheng; Wang, Xiangjing; Ke, Shuo; Fu, Chuanyu; Wan, Changjin; Wan, Qing

doi:10.1109/led.2022.3149900

Cited by 24 publications

(8 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The values of maximum C i for the MIM capacitors employing the LZO thin films were estimated to be approximately 1.5, 2.7, and 3.4 μF/cm 2 at a measurement frequency of 20 Hz, when the Li doping concentration was varied to 7, 10, and 20%, respectively, showing strong frequency dependence due to polarization of Li ions incorporated in the LZO films. In particular, the typical value obtained from the capacitor using 10%-doped LZO was identified to fall on the comparable point in the benchmark plot for previously reported EGIs, as shown in Supporting Information Figure S2. ,,− The maximum value of C i was also obtained to be superior to those appearing in the benchmark at lower measurement frequencies. Consequently, a strong EDL coupling effect could be accomplished for the coated LZO thin film via optimum Li doping process, and hence, the channel conductance of the EGTs using the LZO EGIs was expected to be effectively controlled for synaptic operations.…”

Section: Resultssupporting

confidence: 65%

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO₂ Electrolyte Gate Insulator

Kim,

Kwon,

Seong

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Artificial synapses with ideal functionalities are essential in hardware neural networks to allow for energy-efficient analog computing. Electrolyte-gated transistors (EGTs) are promising candidates for artificial synaptic devices due to their low voltage operations supported by large specific capacitances of electrolyte gate insulators (EGIs). We investigated the synapse transistor employing an In–Ga–Zn–O channel and a Li-doped ZrO2 (LZO) EGI so as to improve the short-term plasticity (STP) and long-term potentiation (LTP). The LZO EGIs showed distinct differences in characteristics depending on the Li doping concentration, and we adopted the optimum doping concentration of 10%. Based on the strong electric double layer effect secured from the LZO, we successfully demonstrated excellent synaptic operations with gradual modulations of excitatory synaptic plasticity with variations in amplitude, width, and number of applied pulse spikes. The introduction of the LZO EGI was verified to improve typical short-term plasticity such as paired-pulse facilitation. Furthermore, by minutely controlling the pulse spike conditions, the conversion to LTP from STP was clearly accomplished while implementing the anti-Hebbian spike timing-dependent plasticity. Finally, the array configuration of synaptic devices, which is essential for realizing neuromorphic computing, was also demonstrated. In a 3 × 3 array architecture, the weighted-sum operation was well emulated to assign multilevels in seven states with the pulse width modulation scheme.

show abstract

Section: Resultssupporting

confidence: 65%

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO₂ Electrolyte Gate Insulator

Kim,

Kwon,

Seong

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…FTEs are an important part of the recently emerging class of flexible optoelectronic devices. Their future application scenarios place higher requirements on the flexibility, light transmittance, and electrical properties of the electrodes [266][267][268][269][270]. Traditional electrode materials are difficult to meet the demand.…”

Section: Applicationsmentioning

confidence: 99%

Recent advances in nanofiber-based flexible transparent electrodes

Zhang

Zhu

Tai

et al. 2023

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

Flexible and stretchable transparent electrodes are widely used in smart display, energy, wearable devices and other fields. Due to the limitations of flexibility and stretchability of indium tin oxide (ITO) electrodes, alternative electrodes have appeared, such as metal films, metal nanowires, and conductive meshes. However, few of the above electrodes can simultaneously have excellent flexibility, stretchability, and optoelectronic properties. Nanofiber (NF), a continuous ultra-long one-dimensional conductive material, is one of the most promising materials for high-performance transparent electrodes with excellent properties due to its unique structure. This paper summarizes the important research progress of NF flexible transparent electrodes (FTEs) in recent years from the aspects of NF electrode materials, preparation technology and application. First, the unique advantages and limitations of various NF materials are systematically discussed. Then, we summarized the preparation technology of various advanced NF FTEs, and pointed out the future development trend. We also discussed the application of NFs in solar cells, supercapacitors, electric heating equipment, sensors, etc., and analyzed its development potential in flexible electronic equipment, as well as problems that need to be solved. Finally, the challenges and future development trends are proposed for the wide application of NF FTEs in the field of flexible optoelectronics.

show abstract

“…Therefore, nanofiber optoelectronic synapse transistors have higher switching speed, smaller size, lower power consumption, and greater reliability comparing with other synaptic devices. [6][7][8] In the meantime, multi-functional synaptic plasticity can be achieved in a single synaptic device through photoelectric synergy, greatly simplifying the artificial neural network (ANN) with improved the robustness and scalability. [7] What is more, a stronger light-guiding effect may be exhibited by nanofibers with higher surface area, which can be beneficial for simulating synaptic plasticity and can enrich the diversity of neural network designs.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8] In the meantime, multi-functional synaptic plasticity can be achieved in a single synaptic device through photoelectric synergy, greatly simplifying the artificial neural network (ANN) with improved the robustness and scalability. [7] What is more, a stronger light-guiding effect may be exhibited by nanofibers with higher surface area, which can be beneficial for simulating synaptic plasticity and can enrich the diversity of neural network designs. [9] Therefore, the nanofiber optoelectronic synapse transistors with synergistic synaptic plasticity may have promising applications in ANN for neuromorphic computing.…”

Section: Introductionmentioning

confidence: 99%

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Yang

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In2O3 nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP) and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5×5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

show abstract

Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing

Cited by 24 publications

References 27 publications

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO₂ Electrolyte Gate Insulator

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO₂ Electrolyte Gate Insulator

Recent advances in nanofiber-based flexible transparent electrodes

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Contact Info

Product

Resources

About

Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing

Cited by 24 publications

References 27 publications

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

Recent advances in nanofiber-based flexible transparent electrodes

W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Contact Info

Product

Resources

About

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO₂ Electrolyte Gate Insulator

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO₂ Electrolyte Gate Insulator

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity