Photoelectrical Properties of Fullerene Doped P3HT Blends for Photo Sensing Applications

Aruna, P.; Joseph, C.M.

doi:10.1016/j.matpr.2015.07.047

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…Furthermore, CP films can sense temperature and light since these external factors can change the charge carrier concentration and also cause the escape of charge carriers from traps in the CP film, leading to lower resistance upon exposure to these external factors 36 – 41 . Again, the wrinkled RP–T50–COOH-based sensor performs noticeably better than the P3HT-based counterpart.…”

Section: Resultsmentioning

confidence: 99%

Integrating charge mobility, stability and stretchability within conjugated polymer films for stretchable multifunctional sensors

et al. 2022

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Conjugated polymers (CPs) are promising semiconductors for intrinsically stretchable electronic devices. Ideally, such CPs should exhibit high charge mobility, excellent stability, and high stretchability. However, converging all these desirable properties in CPs has not been achieved via molecular design and/or device engineering. This work details the design, synthesis and characterization of a random polythiophene (RP-T50) containing ~50 mol% of thiophene units with a thermocleavable tertiary ester side chain and ~50 mol% of unsubstituted thiophene units, which, upon thermocleavage of alkyl chains, shows significant improvement of charge mobility and stability. Thermal annealing a RP-T50 film coated on a stretchable polydimethylsiloxane substrate spontaneously generates wrinkling in the polymer film, which effectively enhances the stretchability of the polymer film. The wrinkled RP-T50-based stretchable sensors can effectively detect humidity, ethanol, temperature and light even under 50% uniaxial and 30% biaxial strains. Our discoveries offer new design rationale of strategically applying CPs to intrinsically stretchable electronic systems.

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Section: Resultsmentioning

confidence: 99%

Integrating charge mobility, stability and stretchability within conjugated polymer films for stretchable multifunctional sensors

et al. 2022

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“…Majority of inorganic semiconductor based detectors are highly sensitive to UV light and are more expensive [7]. Moreover, these detectors exhibit some inherent limitations such as high cost and low quantum efficiency [8], [9]. For weak light sensing, preamplifiers are utilized to identify the light [10].…”

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confidence: 99%

“…The CMOS compatibility of OFETs has been helpful in interfacing it with current technology. Photodetectors other than OFET based structures have their own limitations such as low speed, high noise and low efficiency [8], [9]. OFET-based photodetectors dissipate less power due to very high input impedance of the device.…”

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confidence: 99%

Gate Dependent Tunable Photosensitivity of Copper Phthalocyanine Based Organic Field Effect Transistors

Vijayan¹,

Thomas²,

Kumar³

et al. 2019

IJITEE

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Organic field effect transistor (OFET) based photodetector with high sensitivity was fabricated using copper phthalocyanine (CuPc) as photoactive channel for weak light detection. The device fabrication was conducted at room temperature using thermal evaporation technique. The opto-electrical properties of the devices under dark and light conditions are studied in this work. The performance of the photodetector depends on the incident wavelength and the intensity of the incident monochromatic light. We also show that the photoresponse could be tuned by the gate bias, which offers an additional benefit for practical applications. The transfer characteristics of the devices appear to enhance under light illumination. A slight enhancement in the carrier mobility was also detected upon illumination. Similarly, the subthreshold swing has been reduced from 1.31 ± 0.18 V/decade under dark condition to 0.76 ± 0.12 V/decade under illumination. Further impact of gate voltage on responsivity, on/off ratio and detectivity was also studied for the proposed device. The maximum photosensitivity and responsivity obtained from these OFET based photodetectors was 237.21 ± 8.02 and 7.77 ± 0.17 A/W respectively at a power density of 1 mW/cm2 while operating at an input voltage of 4 V and bias voltage of -5 V. Also, a maximum detectivity of 1.38 ± 0.03×10 12 Jones was obtained under the same operating condition. The high sensitivity, good stability, low noise and fast response towards weak light with different wavelength imply that OFET based photodetectors are particularly suitable for photodetection in the visible region of electromagnetic spectrum.

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Realizing broad-bandwidth visible wavelength photodiode based on solution-processed ZnPc/PC71BM dyad

et al. 2017

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Photoelectrical Properties of Fullerene Doped P3HT Blends for Photo Sensing Applications

Cited by 7 publications

References 27 publications

Integrating charge mobility, stability and stretchability within conjugated polymer films for stretchable multifunctional sensors

Integrating charge mobility, stability and stretchability within conjugated polymer films for stretchable multifunctional sensors

Gate Dependent Tunable Photosensitivity of Copper Phthalocyanine Based Organic Field Effect Transistors

Realizing broad-bandwidth visible wavelength photodiode based on solution-processed ZnPc/PC71BM dyad

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