PHOTOELECTRICAL PROPERTIES OF p-Si/Cd1-xZnxS(Se)1-ySe(Te)y HETEROJUNCTIONS

Abstract

In this paper the photoelectrical properties of p-Si/Cd1-xZnxS(Se)1-ySe(Te)y type thin film heterojunctions in a wide range of wavelengths (300 - 1400 nm) were characterized depending on the quantitative composition (0≤x≤1 and 0≤y≤1) of Cd1-xZnxS(Se)1-ySe(Te)y type films, electrochemical deposition potential, mode and medium of heat treatment (HT). In order to clarify the effect of these factors on the photoelectric properties and basic parameters of heterojunctions with different composition, the spectral distribution of photoconductivity, volt-ampere characteristics (I-U characteristics), amper-light characteristics were studied.

Synthesis and characterization of nanoscale material ZnS in porous silicon by chemical method

“…Etching silicon with florid acid provides a spontaneous, self-limiting chemical method for producing PS, which exhibits the PL properties [1].The luminescence of the PS and ZnS-PS samples was investigated using an FS900 EAI spectrometer in the near UV and visible spectral regions. The excitation source was a 450 W xenon lamp, the excitation wavelengths were 230, 320, 420 nm.…”

“…PS have nanoscale pores and has new electronic and optical properties. PS exhibits bright visible PL, which explained by the result of quantum-size effects in nanoscale pores of Si [1]. The radiating wavelength of PS can be control by adjusting etching process.…”

Optimization of chemical bath deposited CdSSe thin films

“…The development of nanostructured semiconductor materials over many decades, as well as their possession of unique and distinctive properties, has led to their use in many different applications [1]. Among various semiconductor materials, cadmium selenide (CdSSe) is an important direct-band semiconductor with band gap (Eg) pf 1.74 eV, having unique optical properties resulting from quantum confinement effect and wide tuning of bandgap with particle size [2].…”

Untitled

“…The detection and investigation of thermal nonlinearity in GaSe crystals is of particular interest. Previously, optical nonlinearities of electronic origin were discovered in GaSe, such as harmonic generation [1,2], parametric light generation [3,4], electron-hole plasma [5][6][7][8][9], stimulated emission [10][11][12][13][14], multiphoton absorption [ 15,16], etc., have been observed in these crystals.…”