In this paper the photoelectrical properties of p-Si/Cd1-xZnxS(Se)1-ySe(Te)y type thin film heterojunctions in a wide range of wavelengths (300 - 1400 nm) were characterized depending on the quantitative composition (0≤x≤1 and 0≤y≤1) of Cd1-xZnxS(Se)1-ySe(Te)y type films, electrochemical deposition potential, mode and medium of heat treatment (HT). In order to clarify the effect of these factors on the photoelectric properties and basic parameters of heterojunctions with different composition, the spectral distribution of photoconductivity, volt-ampere characteristics (I-U characteristics), amper-light characteristics were studied.