2005
DOI: 10.1016/j.solener.2004.08.005
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Photoelectrical properties of pulsed laser deposited boron doped p-carbon/n-silicon and phosphorus doped n-carbon/p-silicon heterojunction solar cells

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Cited by 35 publications
(21 citation statements)
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“…p-type while silicon substrate acted as an n-type which formed the rectifying behaviour. The same trend behaviour of heterojunction carbon solar cell were obtained by others but fabricated using different method and precursor [12][13][14]. Beside forming of diode behaviour, precursor of palm oil has a good potential in fabricated photovoltaic carbon solar cell in the near future as proved in Fig.…”
Section: Methodssupporting
confidence: 76%
See 1 more Smart Citation
“…p-type while silicon substrate acted as an n-type which formed the rectifying behaviour. The same trend behaviour of heterojunction carbon solar cell were obtained by others but fabricated using different method and precursor [12][13][14]. Beside forming of diode behaviour, precursor of palm oil has a good potential in fabricated photovoltaic carbon solar cell in the near future as proved in Fig.…”
Section: Methodssupporting
confidence: 76%
“…Low values of V OC , and J SC are believed from low built-in voltage which caused by defects in a-C:B thin film and thus influenced the shorter lifetime and diffusion length and movement of drift carriers. The drift of carriers by built-in electric field plays an important role in cells [12][13][14]. Less of drift carriers might be due to the smaller built in voltage and therefore electron-hole pairs generated are recombined near surface.…”
Section: Current Density-voltage Characteristic Under Illuminationmentioning
confidence: 99%
“…29 In highly phosphorous doped Si 30 or in phosphorus doped carbon films, the P 2p binding energy is $6 eV smaller than that observed in PSG. 31 The P 2p peak of the residual P is shifted only 0.6 eV from the measured PSG value towards a lower binding energy after etching (Fig. 2(a)).…”
Section: Phosphorus Bonding At the Interfacementioning
confidence: 86%
“…If P atoms are not directly bonded to the Si, the mechanism of P passivation may be an indirect one, relieving interface stress and passivating dangling bonds. 31 …”
Section: Phosphorous Concentration Profile Across the Sio 2 /Sic mentioning
confidence: 99%
“…This structure based on carbon materials has attracted a great interest for the potential applications in optoelectronic devices especially in the development of the photovoltaic solar cell, due to the fact that the cost of solar cell using silicon is much higher to meet the daily life expectations [1]. However, various properties of carbon thin films were directly influenced by methods, conditions of deposition and also on the starting precursor materials.…”
Section: Introductionmentioning
confidence: 99%