Photoelectrical properties of spherical avalanche diodes in silicon

Sigmund, H.

doi:10.1016/0020-0891(68)90034-1

Cited by 12 publications

(7 citation statements)

References 8 publications

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“…The so-called “spherical avalanche diode” seems to be the first APD intentionally designed using a non-planar approach [ 33 ]. The main idea of the design ( Figure 1 ) was to simultaneously achieve rather contradictory objectives: Uniformity of an avalanche multiplication over the sensitive region at the cone tip in the space angle

; Enhancement of an electric field at the cone tip to lower breakdown voltage; Protection from edge breakdown without guard ring structures; Reduction of an electric field at the surface of the silicon to lower dark current.…”

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

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Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs.

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Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

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“…The ionization rate is approximated by the truncated Taylor series a(e) s a + o^E z (4) E-2 and (2) may then be used to obtain the continuity equations for the RF carrier densities expanded about E with E = E • z , and a. a' = da/de, evaluated at e = E . Equations (1) (6) where only first-order RF terms are retained, c = -a'(J + J )/q, and (5), (6), (10), and (11) constitute a complete set of equations. Equations (5) and (6) may be combined to…”

Section: Model and Basic Equationsmentioning

confidence: 99%

A Theory of Multiple Modes in Avalanche Diodes

Berger¹

1970

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This report develops a multidimensional, dynamic analysis of solid state avalanche diodes. Well-established electromagnetic concepts are applied to a widely used model of the diode and reveal a discrete spectrum of new small-signal modes. The approach used enlarges the conventional perspective and has permitted the discovery that at least one of these new modes appears to possess a high power capability (associated with its two-terminal negative resistance) which has been partially realized experimentally. The lowest-order mode contains all the results of prior quasi-static theories on the normal IMPATT mode, plus additional information which is used to delineate the range of validity of the quasi-static results. Formal discrepancies are uncovered between the usual quasistatic, one-dimensional result for diode impedance used in solid state studies and the dynamic multidimensional result for the normal IMPATT mode developed from microwave circuit theory. However, these discrepancies are numerically quite small except in certain narrow frequency bands.

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“…The most relevant examples are Geiger-Mode APDs developed as predecessors or alternatives to the planar SiPMs. Spherical avalanche diodes with a radius of the pn-junction of 2 µm and a breakdown voltage of 50 V seems to be the earliest device of this type operated in a photon counting mode [14]. Geiger-Mode APDs with negative feedback, also known as Metal-Resistor-Semiconductor (MRS) APDs, were designed as an array of avalanche micro-channels.…”

Section: Introductionmentioning

confidence: 99%

Tip Avalanche Photodiode -- A new generation Silicon Photomultiplier based on non-planar technology

Engelmann¹,

Schmailzl²,

Iskra³

et al. 2020

Preprint

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The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are gradually approaching to a saturation. In this work we present our new concept to overcome the intrinsic limitations of planar configurations of electrodes. Our non-planar technology is based on focusing and enhancing the electric fields by tip-like electrodes. The shape of the electric field and the lack of typical micro-cell edges, allows us to exclude cell separation boundaries and eliminate dead space around active cell areas. Our design provides a high-density micro-cell layout with a high geometric efficiency. It resolves the well-known trade-off between the detection efficiency and the dynamic range. The first "Tip Avalanche Photodiode" (TAPD) prototypes show a remarkable geometric efficiency above 80 % for a micro-cell pitch of 15 µm. This directly translates into a photon detection efficiency (PDE) record peak value of 73 % at 600 nm with respect to the state-of-the-art SiPMs. Moreover, the PDE remains above a value of 45 % up to a wavelength of 800 nm with another record value of 22 % at 905 nm. The reduced micro-cell capacity allows for a fast recovery time below 4 ns, which improves the operation at high photon rates. Overall, the TAPD is anticipated to be a very promising SiPM generation for various wide-spectral and high-dynamic-range applications in health science, biophysics, particle physics and LiDARs.

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Photoelectrical properties of spherical avalanche diodes in silicon

Cited by 12 publications

References 8 publications

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

A Theory of Multiple Modes in Avalanche Diodes

Tip Avalanche Photodiode -- A new generation Silicon Photomultiplier based on non-planar technology

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