Photoelectrochemical Etching of In<sub>x</sub>Ga<sub>1−x</sub>N

Cho, Hyun; Donovan, S. M.; Abernathy, C. R.; Pearton, S. J.; Ren, F.; Han, Jung; Shul, R. J.

doi:10.1557/s1092578300003264

Cited by 4 publications

(4 citation statements)

References 24 publications

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“…15) In addition, they also result in the fabrication of rough etched sidewalls. Various investigations of wet etching by photo-electrochemical etching [16][17][18][19][20][21] and anodic etching [22][23][24] techniques have been carried out using KOH, H 3 PO 4 , and NaOH solutions. These techniques have advantages in terms of cost, simplicity, and low damage.…”

Section: Introductionmentioning

confidence: 99%

Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

Itoh

Kinoshita

Koike

et al. 2006

jjap

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GaN striped structures along the <11 20 > and <1 100 > directions were fabricated by a combination etching technique, consisting of reactive ion etching followed by KOH wet etching. After wet etching, the sidewalls of the striped structures along the <11 20 > direction became very smooth and straight, compared with normal wet etching and dry etching. From the differences of the etching along the <1 100 > direction, it was found that etching mainly occurs in the (1 100) plane. This phenomenon can be explained by the action of OH- ions, which are repelled by N dangling bonds on the surface and which attack Ga back bonds as well as the mechanism of (000 1) polar GaN etching.

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Section: Introductionmentioning

confidence: 99%

Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

Itoh

Kinoshita

Koike

et al. 2006

jjap

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“…30 It is generally understood that the wet oxidation rate is limited by the diffusion of OH − ions, as with PEC etching of n-GaN. 25,29,31,32 In our oxidation studies, however, we observed current variation with increasing UV light intensity. This indicated that the oxidation rate is mainly limited by the generation of holes.…”

Section: A Cyclic Voltammetry Measurement and Oxidation Ratementioning

confidence: 66%

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Shiozaki

Hashizume

2009

Journal of Applied Physics

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Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/ cm 2 . After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface-state density between GaN and anodic oxide to be about 5 ϫ 10 11 cm −2 eV −1 , which is rather low value for compound semiconductors.

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“…[6][7][8] Several techniques have also been used for dry etching of GaN layers. [6][7][8] Several techniques have also been used for dry etching of GaN layers.…”

Section: Introductionmentioning

confidence: 99%

Etch characteristics of GaN and BN materials in chlorine-based plasmas

Medelci

Tempez

Starikov

et al. 2000

Journal of Elec Materi

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Photoelectrochemical Etching of In_xGa_1−xN

Cited by 4 publications

References 24 publications

Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Etch characteristics of GaN and BN materials in chlorine-based plasmas

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Photoelectrochemical Etching of InxGa1−xN

Cited by 4 publications

References 24 publications

Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Etch characteristics of GaN and BN materials in chlorine-based plasmas

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Product

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Photoelectrochemical Etching of In_xGa_1−xN