2005
DOI: 10.1021/jp058051b
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Photoelectrochemical Properties of Fe2O3−Nb2O5 Films Prepared by Sol−Gel Method

Abstract: Fe2O3-Nb2O5 coating films of various Nb/(Fe + Nb) mole ratios were prepared on nesa silica glass substrates from Fe(NO3)3.9H2O - NbCl5 - CH3(CH2)2CH2OH - CH3COOH solutions by the sol-gel method. The photoanodic properties were studied in a three-electrode cell with an aqueous buffer solution of pH = 7 as the supporting electrolyte. The crystalline phases identified were alpha-Fe2O3 (Nb/(Fe + Nb) = 0), alpha-Fe2O3 + FeNbO4 (Nb/(Fe + Nb) = 0.25), FeNbO4 (Nb/(Fe + Nb) = 0.5), FeNbO4 + Nb2O5 (Nb/(Fe + Nb) = 0.75),… Show more

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Cited by 52 publications
(37 citation statements)
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“…For instance, a small oxygen deficiency leads to the transition from insulating to n-type semiconducting behavior 9 . Niobium oxide films have been prepared by different methods including magnetron sputtering 15 , electrodeposition and anodization 16 , thermal oxidation 17 , sol-gel methods [18][19][20][21][22] , chemical vapor deposition (CVD) 23 or atomic layer epitaxy 24 . One-dimensional nanostructures typically exhibit enhanced charge transport properties due to their anisotropy and thus are very interesting from the device point of view.…”
Section: Introductionmentioning
confidence: 99%
“…For instance, a small oxygen deficiency leads to the transition from insulating to n-type semiconducting behavior 9 . Niobium oxide films have been prepared by different methods including magnetron sputtering 15 , electrodeposition and anodization 16 , thermal oxidation 17 , sol-gel methods [18][19][20][21][22] , chemical vapor deposition (CVD) 23 or atomic layer epitaxy 24 . One-dimensional nanostructures typically exhibit enhanced charge transport properties due to their anisotropy and thus are very interesting from the device point of view.…”
Section: Introductionmentioning
confidence: 99%
“…It was found that the potential at the bottom of most n-type oxide semiconductors is ca. 0.10-0.30 eV more negative than the Fermi level [16][17][18]. For the Bi 2 WO 6 film, the difference between the potential at the bottom of conduction band and the Fermi level is ca.…”
Section: Photoelectrochemical Studies Of the Thin Filmsmentioning
confidence: 94%
“…Various methods have been used for the synthesis of hematite nanostructured films: aqueous chemical growth [14], spray pyrolysis [15,16], ultrasonic spray-pyrolysis [17], chemical vapour deposition (CVD) [18], sol-gel [19] and electrodeposition [20]. Electrodeposition is an emerging method.…”
Section: Introductionmentioning
confidence: 99%