Bismuth‐based ferroelectric oxide films including BiFeO3, Bi2WO6 and BiVO4 with different band structure are prepared by pulsed laser deposition method and used as n‐type semiconductors in photovoltaic devices. The oxide films are combined with p‐type organic semiconductor poly(3‐hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO2, the bismuth‐based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth‐based oxides are promising materials for photovoltaic devices.