2007
DOI: 10.1016/j.tsf.2006.11.017
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Photoelectrochemical properties of thin Bi2WO6 films

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Cited by 36 publications
(20 citation statements)
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“…Given the energy level of the conduction band of BVO is about 4.1 eV, according to Eq. , V Loss in this device is about 0.32 V. For BWO/P3HT device, the open circuit voltage is 0.57 V and the conduction band level is 4.37 eV, and thus the corresponding V Loss is about 0.16 V. The voltage loss for the above two devices is in the reasonable region and the difference in the voltage loss for different devices can be attributed to the different interface properties and doping level in the semiconductors. However, BFO has the conduction band level of 3.3 eV whereas the open circuit voltage of the BFO/P3HT device is only 0.48 V, and thus V Loss is about 1.32 V. In this case, oxygen vacancies in BFO film may play an important role, which is found to be about 0.6 eV below the conduction band edge .…”
Section: Resultsmentioning
confidence: 80%
“…Given the energy level of the conduction band of BVO is about 4.1 eV, according to Eq. , V Loss in this device is about 0.32 V. For BWO/P3HT device, the open circuit voltage is 0.57 V and the conduction band level is 4.37 eV, and thus the corresponding V Loss is about 0.16 V. The voltage loss for the above two devices is in the reasonable region and the difference in the voltage loss for different devices can be attributed to the different interface properties and doping level in the semiconductors. However, BFO has the conduction band level of 3.3 eV whereas the open circuit voltage of the BFO/P3HT device is only 0.48 V, and thus V Loss is about 1.32 V. In this case, oxygen vacancies in BFO film may play an important role, which is found to be about 0.6 eV below the conduction band edge .…”
Section: Resultsmentioning
confidence: 80%
“…In our case, however, the LUMO of MX-5B (À0.9 V versus NHE) [31] is more positive than the potential of conduction band of AgBr (À1.04 V versus NHE) [32]; thus, the excited electrons of dye are thermodynamically unfavorable to transfer to AgBr. Although the LUMO of MX-5B is more negative than the potential of conduction band of Bi 2 WO 6 (À0.07 V versus NHE) [33], the Bi 2 WO 6 show poor activity for the degradation of MX-5B as shown in Fig. 7B, which indicates that the charge injection from the MX-5B to the Bi 2 WO 6 is inefficient.…”
Section: Photocatalytic Performance Under Visible-light Irradiationmentioning
confidence: 99%
“…The electronic structures and energy band of visible-lightresponse component AgBr and Bi 2 WO 6 are widely studied by researchers [20,[32][33]. On the basis of their energy band diagram, the photocatalytic process of AgBr-Ag-Bi 2 WO 6 nanojunction system can be proposed, as shown in Fig.…”
Section: àmentioning
confidence: 99%
“…Typically, Bi 2 WO 6 films can be prepared by directly coating Bi 2 WO 6 powder on the substrate through the spin coating technique [63], the layer-by-layer technique [64], the electrostatic self-assembly deposition method [65], or the dipcoating method [66]. These Bi 2 WO 6 thin films are non-porous and have relatively small BET surface, resulting in relatively poor photocatalytic activities.…”
Section: The Preparation Of Bi 2 Wo 6 Thin Filmmentioning
confidence: 99%