Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

Yadav, Abhijit A.; Salunke, S. D.

doi:10.1016/j.jallcom.2015.04.041

Cited by 31 publications

(11 citation statements)

References 46 publications

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“…Up to now, using this method only, γ-In 2 Se 3 was prepared in the In 2 Se 3 family. ,− In the preparation of γ-In 2 Se 3 nanofilms on n-Si(100) by RF magnetron sputtering, a highly pure In 2 Se 3 ceramic target served as the cathode . The base pressure was evacuated to 1.9 × 10 –4 Pa; then the working gas (99.99% Ar gas) was passed through sputtering chamber at a flow rate of 20 sccm and the pressure of deposition was kept at 0.5 Pa; the sputtering power was set to 80 W; the substrate temperature was at 360 °C; and the distance of the substrate to target was tuned to 5 cm.…”

Section: Strategies For the Preparation Of In2se3 Nanostructures And ...mentioning

confidence: 99%

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Niu

et al. 2021

ACS Nano

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Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.

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Section: Strategies For the Preparation Of In2se3 Nanostructures And ...mentioning

confidence: 99%

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Niu

et al. 2021

ACS Nano

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“…Among these semiconductors, indium selenide is an important layered semiconductor with an optimum direct bandgap, efficient visible‐light absorption, and phase‐change memory effect. These properties make it a promising candidate for various important applications in diverse areas, such as solar energy conversion, thermoelectric power generation, random access memories, photodetectors, and optoelectronics in the visible region …”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis of γ‐In₂Se₃ Nanoflowers toward High Performance Self‐Powered Broadband γ‐In₂Se₃/Si Heterojunction Photodiode

Chen

Liu

Qiao

et al. 2017

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An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In Se nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In Se , a high-quality γ-In Se /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In Se /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In Se /Si heterojunction very interesting as highly efficient photodetectors.

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“…Indium chalcogenides including indium sulphide (InS), copper indium sulphide (CIS), and CIGS materials are of particular importance in the field of thin films photovoltaics [15,16]. The environment-friendly characteristics and unique properties such as chemical stability and good transparency of the InS are suitable for photovoltaic applications.…”

Section: Introductionmentioning

confidence: 99%

Crystallized InBiS3 thin films with enhanced optoelectronic properties

Ali

Hussain

Ahmed

et al. 2018

Applied Surface Science

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In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the postannealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 10 5 cm-1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 -cm, respectively) with increasing annealing temperatures (from 200 to 350°C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications.

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Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

Cited by 31 publications

References 46 publications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Facile Synthesis of γ‐In₂Se₃ Nanoflowers toward High Performance Self‐Powered Broadband γ‐In₂Se₃/Si Heterojunction Photodiode

Crystallized InBiS3 thin films with enhanced optoelectronic properties

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Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

Cited by 31 publications

References 46 publications

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

Facile Synthesis of γ‐In2Se3 Nanoflowers toward High Performance Self‐Powered Broadband γ‐In2Se3/Si Heterojunction Photodiode

Crystallized InBiS3 thin films with enhanced optoelectronic properties

Contact Info

Product

Resources

About

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Facile Synthesis of γ‐In₂Se₃ Nanoflowers toward High Performance Self‐Powered Broadband γ‐In₂Se₃/Si Heterojunction Photodiode