Photoelectrochemical Studies on Electrodeposited Cd–Fe–Se Thin Films

Abstract

Thin films of Cd±Fe±Se have been prepared onto stainless steel substrates, for various compositions of Cd and Fe and solution concentrations by an electrodeposition technique. Cd 0.9 Fe 0.1 Se films, electrodeposited with a solution concentration of 10 mM, forming a photoelectrochemical (PEC) cell using ferri-ferrocyanide electrolyte, show a better PEC performance. The films deposited using optimized composition (9 : 1 : 10), solution concentration (10 mM), deposition time (30 min) and current density (1 mA/cm 2 ) have been used for further characterization by X-ray diffraction (XRD) and PEC techniques. It has been found that the as-grown films are polycrystalline in nature with orientations along the peaks of hexagonal CdSe and FeSe. It has also been found from the current±voltage and power output characteristics that n-Cd±Fe±Se/ferri-ferrocyanide junctions show good rectifying nature and the efficiency of the n-Cd 0.9 Fe 0.1 Se/ferri-ferrocyanide/C PEC cell is 0.41% with FF % 50%.

n-Type polycrystalline (CdZn)Se photoelectrode synthesis and its photoelectrochemical characterizations

“…The improvement in open circuit voltage was due to increase in flat band potential. The low efficiency in the present investigation might be due to the high series resistance of the PEC cell, low thickness of the film and interface states which are responsible for the recombination mechanism [19]. The series resistance and shunt resistance were calculated from the slope of the power output characteristics using the relation:…”

Effect of indium doping on (CdZn)Se composite thin films

“…Because of their electronic and optical properties, Cd 1−x Zn x Se materials are applied in radiation detectors and laser screen materials in projection color TV [1][2][3]. Cd 1−x Zn x Se is one of the important materials in electroluminescent, photoconductive and photovoltaic applications [4][5][6][7].…”

Growth and Characterization of Wide-Gap Cd1-xZnxSe Ternary Alloys by Using Electron Beam Evaporation Technique

“…The technological interest in polycrystalline-based devices is mainly caused by their very low production costs. Different researchers [16][17][18][19] prepared Cd 1−x Zn x Se films by different techniques and studied their structural, optical and photoelectrochemical properties. In the present study we have prepared Cd 1−x Zn x Se films by electron beam evaporation technique at 100…”