Photoelectron diffraction and surface crystallography

Grenet, G.; Jugnet, Y.; Homberg, S.; Poon, H. C.; Đức, Trần Minh

doi:10.1002/sia.740140613

Cited by 19 publications

(8 citation statements)

References 98 publications

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“…12,13 In contrast to kinetic energies lower than ∼200 eV, back-and multiple-scattering of the emerging photoelectrons are less pronounced and the resulting spectra are less complex. 13 According to the single scattering model, 11 enhanced intensity arises from the forward-scattering of photoelectrons by neighboring atoms along the forward direction. The XPD probe depth for our experiments was 36 Å as estimated using the inelastic mean free path (IMFP) of Zn 2p 3/2 photoelectrons.…”

Section: Resultsmentioning

confidence: 99%

“…The XPD probe depth for our experiments was 36 Å as estimated using the inelastic mean free path (IMFP) of Zn 2p 3/2 photoelectrons. 13 The latter was calculated using the universal IMFP equation that effectively describes mean free paths for high-energy electrons. 14 In ZnS, every zinc atom is surrounded by four sulfur atoms in a tetrahedral arrangement which results in either cubic (sphalerite) or, slightly distorted, hexagonal (wurtzite) structure.…”

Section: Resultsmentioning

confidence: 99%

“…Ion beam etching was performed with a 4 kV Ar + ion beam. The energy-dependent XPD experiments were performed using Synchrotron radiation at the undulator beamline 13 C of the Photon Factory (Tsukuba, Japan).…”

Section: Methodsmentioning

confidence: 99%

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Epitaxial ZnS Thin Films Grown by Single Source Chemical Vapor Deposition

2000

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Deposition and subsequent decomposition of the organometallic precursor zinc diethyldithiocarbamate Zn[S2CN(C2H5)2]2 has been shown to produce ZnS films. On Si(111), these films have been seen to grow epitaxially using X-ray photoelectron diffraction (XPD) as a probe. For film thickness from ∼5 to 2000 Å angle-dependent XPD scans, recorded for Zn 2p3/2 intensity as a function of polar angle θ, resulted in a consistent forward scattering peak at θ = 0° which indicated that the films have preferred orientation. Detailed analysis of the relative photoelectron intensities (Zn 2p3/2 and S 2p) indicated that the films are of cubic structure and [111] oriented. This was despite the total carbon concentration in the bulk remaining at ∼3 atomic %. This study demonstrates that the relatively simple and low-energy single-source chemical vapor deposition growth technique can be utilized for the production of epitaxial II−VI semiconductor thin films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Epitaxial ZnS Thin Films Grown by Single Source Chemical Vapor Deposition

2000

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“…As a diffraction technique, XPD reveals all the crystallographic directions of the nearest neighbors of this photoelectron emitter. [18][19][20] But because XPD is a very short-range probe of the local atomic arrangement around the photoelectron emitter, it has to be compared to a long-range probe such as TEM.…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron diffraction study of thinAl2O3films grown on Si(111) by molecular beam epitaxy

et al. 2009

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The in-plane and out-of-plane crystallographic orientations of Al 2 O 3 films grown by molecular beam epitaxy on Si͑111͒ have been determined by combining x-ray photoelectron diffraction ͑XPD͒ with transmission electron microscopy ͑TEM͒. On the one hand, polar and azimuth XPD curves for Al 2p, O 1s, and Si 2p core levels ͑recorded on a 6-nm-thick film͒ clearly indicate that Al 2 O 3 grows ͑111͒ oriented on Si͑111͒ but with two in-plane orientations: a "direct" one, i.e., ͓112͔Al 2 O 3 / /͓112͔Si͑111͒ and a "mirror" one, i.e., ͓112͔Al 2 O 3 ͑111͒ / /͓112͔Si͑111͒. On the other hand, a close inspection of the 404 Al 2 O 3 TEM diffraction spots ͑recorded on a 2-nm-thick film͒ reveals that these two in-plane orientations are slightly rotated with respect to the Si͑111͒ orientations. These two results are consistent with an oxygen plane as the interfacial plane between Al 2 O 3 ͑111͒ and Si͑111͒.

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“…36 At lower energies multiple scattering has to be taken into account, and if there is a structural order of the film molecules the diffraction of photoelectrons can result in additional intensity maxima that are not (only) related to forward scattering. In principle, such x-ray photoelectron diffraction (XPD) studies can also be performed by tilting the film sample with respect to the analyser of a laboratory-based XPS system as described above.…”

Section: Film Structure and Molecular Orientationmentioning

confidence: 99%