High-resolution photoemission and first-principles density-functional calculations were used to study the interaction of oxygen with ZrC͑001͒ and VC͑001͒ surfaces. Atomic oxygen is present on the carbide substrates after small doses of O 2 at room temperature. At 500 K, the oxidation of the surfaces is fast and clear features for ZrO x or VO x are seen in the O͑1s͒, Zr͑3d͒, and V͑2p 3/2 ͒ core levels spectra, with an increase in the metal/carbon ratio of the samples. A big positive shift ͑1.3-1.6 eV͒ was detected for the C 1s core level in O / ZrC͑001͒, indicating the existence of strong O ↔ C or C↔ C interactions. A phenomenon corroborated by the results of first-principles calculations, which show a CZrZr hollow as the most stable site for the adsorption of O. Furthermore, the calculations also show that a C ↔ O exchange is exothermic on ZrC͑001͒, and the displaced C atoms bond to CZrZr sites. In the O / ZrC͑001͒ interface, the surface C atoms play a major role in determining the behavior of the system. In contrast, the adsorption of oxygen induces very minor changes in the C͑1s͒ spectrum of VC͑001͒. The O ↔ V interactions are stronger than the O ↔ Zr interactions, and O ↔ C interactions do not play a dominant role in the O / VC͑001͒ interface. In this system, C ↔ O exchange is endothermic. VC͑001͒ has a larger density of metal d states near the Fermi level than ZrC͑001͒, but the rate of oxidation of VC͑001͒ is slower. Therefore the O / ZrC͑001͒ and O / VC͑001͒ systems illustrate two different types of pathways for the oxidation of carbide surfaces.