Photoelectron spectroscopy study of Ga 3d and As 3d core levels on MBE-grown GaAs surfaces

Arsenic-rich GaAs(0 0 1) surface structure

“…This conclusion drew some controversy in that it did not agree with published STM images [73,74]. Photoemission studies of the GaAs(0 0 1) c(4 Â 4) reconstruction also find a surface signal attributed to Ga atoms on the surface supporting a mixture of Ga and As in the topmost layer [75,76]. Work function measurements have been performed for several of the GaAs(0 0 1) surface reconstructions including the c(4 Â 4) [54,77,78].…”

X-Ray Photoelectron Spectroscopic Investigation of the GaAs Nitridation Mechanism with an ECR Plasma Source

“…The parameters used for the decompositions with the Rainbow software, are listed in Table 1, the only free parameters, in a first step, being the peak positions, heights and widths; the branching ratio and energy splitting of the two spin±orbit components of the 3d levels are taken from literature [9]. The strategy was to identify a decomposition, stable throughout the annealing process, letting the peak positions and widths fixed and varying their relative heights.…”

As and Ga dimers in core-level spectroscopy of S-passivated GaAs(001)

“…The values of the fixed parameters are listed in Table I, together with the energies of the main components. Similar values have been used by several groups [13][14][15][16] in deconvolutions of Ga3d and As3d corelevel spectra. In particular, Le Lay et al 13 Vitomirov et al 16 used 0.48 eV ͑0.155 eV͒ and 0.58 eV ͑0.18 eV͒ for these parameters.…”

“…[30][31][32] In particular, spectroscopic studies of As and Ga core levels have not provided an unambiguous assignment of chemical shifts for Ga and As dimers. [13][14][15][16]33 To what extent do the present results apply to dimers of the clean surfaces obtained either by thermal As decapping [13][14][15][16] or directly from molecular beam epitaxy? 34 We believe that this question requires further experimental investigation.…”