In this paper we present results we obtained in mine detection, in the course of a multi-national European research program.Trials were performed in the Joint Research Center in ISPRA, using polarimetric infrared imagers. Usually the 3-5 im spectral band is used for this application, however we explain that the 8-12 im band is physically a better choice. We thus obtained information on the polarization of the self emitted radiations of the objects so that our method should be more versatile regarding the environment. Images of the global intensity, the radiation global ellipticity and orientation are presented on several types of mines. The obvious increase of contrast between the observed mines and the clutter demonstrates the usefulness of this technique in mine and UXO detection.
In situ ultraviolet photoelectron spectroscopy (UPS) measurements have been performed at GaInAs/GaAs (100) interfaces. The high depth resolution of the UPS technique applied to the specific case of GaInAs/GaAs heterostructures [core-level photoelectron escape depth λ≊2.1 monolayers (MLs)] is shown, yielding quantitative informations on the Ga/In atomic profiles at the ML scale. A surface segregation model is developped and the phenomenological segregation energy is obtained by UPS. This energy is used to generate potential energy profiles in a calculation of the energy of photoluminescence (PL) lines in GaInAs/GaAs quantum wells; the quantitative agreement with measured PL lines is very good.
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