PHOTOEMISSION FROM GaAs THIN FILMS

This review reflects the status (in early 1973) of the problem of producing photoemitters and secondary and field emitters based on a new principle, that of obtaining semiconductor structures with negative electron affinity (ΝΕΑ). The energy level scheme of the surface region of a semiconductor with ΝΕΑ is examined, as well as the conditions for its realization. The main theoretical concepts of the mechanism of the emission from ΝΕΑ emitters are developed, and the difference between their characteriistics and the corresponding characteristics of ordinary emitters are indicated. The technology is discussed of the production of ΝΕΑ photocathodes for the visbile and infrared region of the spectrum, based on III-V semiconductor compounds (principally GaAs) and their solid solutions. Aspects of the production of semitransparent ΝΕΑ photocathodes and secondary emitters operating in transmission are noted. The principal parameters of the experimental and commercial ΝΕΑ photocathodes and secondary electron emitters are given. Data are reported on the use of surfaces with ΝΕΑ in field-emission film cathodes, the operating principle of injection and optoelectronic field emission cathodes is described, and their present-day parameters are given.

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PHOTOEMISSION FROM GaAs THIN FILMS

Abstract: A technique is described for obtaining atomically clean GaAs surfaces by evaporating epitaxially a GaAs layer on the bulk crystal under ultrahigh vacuum. Photoemission sensitivities of 220 μA/lumen have been obtained, with high quantum yields in the near-infrared region.

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References 4 publications

Efficient photoemission from GaAs epitaxial layers

Efficient photoemission from GaAs epitaxial layers

Chapter 3 NEA Semiconductor Photoemitters

A new class of electron emitters

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