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Kang, J. S.; Kwak, Ji-Hyeon; Shin, Yu-Ju; Han, Sang Wook; Kim, K. H.; Min, B. I.

doi:10.1103/physrevb.61.10682

Cited by 24 publications

(17 citation statements)

References 28 publications

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“…The dependence of the valence-band line shape on the photon energy can be used to derive PSW distributions of various electronic states of a given constituent element in the compound. 14,20 The Cooper minimum phenomenon of the Ru 4 d photoionization cross section and the Eu 4d → 4f resonant excitation occur at photon energies hν = 100 and 150 eV, 28 respectively. The bottom blue spectrum in Fig.…”

Section: Methodsmentioning

confidence: 98%

“…To better understand these issues, x-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VB-PES) measurements were performed on RuEu-1212. Partial spectral weights (PSW) 14 of the Ru 4 d, Cu 3d, and O 2p states were derived from VB-PES spectra by taking advantage of the large differences between photon-energy-dependent photoionization cross sections of Ru 4 d, Cu 3d, and O 2p orbitals in RuEu-1212. 15 The XANES measurements and PSW distributions provide direct evidence that Ru 4 d and Cu 3d-O 2p hybridized states at/below the Fermi level (E f ) are weakly coupled in RuEu-1212.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of RuSr2EuCu2O8studied by x-ray absorption and photoemission spectroscopies

et al. 2012

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Local electronic structures of ruthenocuprate RuSr 2 EuCu 2 O 8 (RuEu-1212) were investigated by using x-ray absorption near-edge structure (XANES) and valence-band photoemission (VB-PES) measurements at room temperature, 80 K, and 25 K. The XANES results indicate that when RuEu-1212 is below Curie temperature, T M , electrons are transferred not only from Cu 3d states, but also from Ru 4 d states, to O 2p orbitals. Additionally, the partial spectral weight distributions derived from VB-PES measurements provide evidence of a weak overlapping between Ru 4 d states and strongly Cu 3d−O 2p hybridized states below the Fermi level, which results in a weak coupling between the CuO 2 and RuO 2 layers. The analysis of extended x-ray absorption fine structure shows that the appearance of weak ferromagnetism and superconductivity is accompanied by a significant decrease of dynamic local lattice distortions of high-shell Cu-Sr and Ru-Sr bonding in RuEu-1212.

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Section: Methodsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Electronic structure of RuSr2EuCu2O8studied by x-ray absorption and photoemission spectroscopies

et al. 2012

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“…12.8 and 12.9). The better conductivity of this film over other Ag-based delafossite materials may be attributed to the greater degree of mixing between Co 3d 10 orbitals and O 2p 6 orbitals, resulting in larger delocalization of holes [129,130]. Doped versions of some other Ag-based delafossites have also been reported such as AgNi 1−x Sb x O 2 , AgZn 1−x Sb x O 2 (x = 0.33), etc.…”

Section: P-tco With Delafossite Structurementioning

confidence: 96%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

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Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O 2 /N 2 /CH 4 , etc.) [1][2][3][4]. In this chapter, we have discussed, in details, the formation of spinel and delafossite materials of the form AB 2 O 4 and ABO 2 (A and B may be monovalent, divalent, trivalent, or tetravalent cations, depending on the crystal structure, described later) by reactive sputtering technique. Specially, wide bandgap, ptype semiconducting, and transparent oxide materials with delafossite and spinel structure, having interesting applications in "Transparent Electronics," have been discussed in details. In Sects. 12.2-12.5, a detailed review on the structural, optical, and electrical properties of these p-type transparent conducting oxides (p-TCOs), deposited by reactive sputtering technique, has been presented and the origin of p-type conductivity of these materials has been discussed with considerable attention. Most of the results presented in these sections are reported by various authors working on this field. In Sect. 12.6, synthesis and electro-optical characterization of one of the very important delafossite, p-type semiconducting, and wide-bandgap material, such as CuAlO 2 , produced by our group via reactive sputtering technique, have been discussed in details. Detailed discussions on spinel-and delafossitestructured material can be found in various literatures [5][6][7][8][9][10][11][12][13][14]. Also, detailed reviews on the p-TCO materials have been published by us and others [15][16][17], which cover the syntheses and properties of a range of p-TCO materials reported so far.

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“…2 compares the valence-band PES spectra of AgNi 1Àx Co x O 2 ð0pxp1Þ, obtained with hn ¼ 130 eV. At this photon energy, the Ag 4d emissions are negligible with respect to other electron emissions, Co and Ni 3d emissions are large ð$60270%Þ, and the O 2p emission is about ð$25230%Þ [4]. The rather sharp peak at $ À 1:2 eV in AgCoO 2 ðx ¼ 1Þ is attributed to the Co 3d states, and the peak around À2 eV in AgNiO 2 ðx ¼ 0Þ is attributed to the Ni 3d states.…”

mentioning

confidence: 98%

“…In this paper, we have investigated the electronic structures of AgNi 1Àx Co x O 2 ð0pxp1Þ using photoemission spectroscopy (PES) [4] and soft X-ray absorption spectroscopy (XAS) [5][6][7]. Polycrystalline AgNi 1Àx Co x O 2 ð0pxp1Þ samples were prepared by cation-exchange reaction methods, as described in Ref.…”

mentioning

confidence: 99%